Multi-stacks of epitaxial GeSn self-assembled dots in Si : Structural analysis

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal

5 Scopus Citations
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Author(s)

  • F. Oliveira
  • I. A. Fischer
  • A. Benedetti
  • M. F. Cerqueira
  • M. I. Vasilevskiy
  • And 3 others
  • S. Stefanov
  • S. Chiussi
  • J. Schulze

Detail(s)

Original languageEnglish
Article number125706
Journal / PublicationJournal of Applied Physics
Volume117
Issue number12
Publication statusPublished - 28 Mar 2015
Externally publishedYes

Abstract

We report on the growth and structural and morphologic characterization of stacked layers of self-assembled GeSn dots grown on Si (100) substrates by molecular beam epitaxy at low substrate temperature T = 350°C. Samples consist of layers (from 1 up to 10) of Ge0.96Sn0.04 self-assembled dots separated by Si spacer layers, 10nm thick. Their structural analysis was performed based on transmission electron microscopy, atomic force microscopy, and Raman scattering. We found that up to 4 stacks of dots could be grown with good dot layer homogeneity, making the GeSn dots interesting candidates for optoelectronic device applications.

Citation Format(s)

Multi-stacks of epitaxial GeSn self-assembled dots in Si : Structural analysis. / Oliveira, F.; Fischer, I. A.; Benedetti, A.; Cerqueira, M. F.; Vasilevskiy, M. I.; Stefanov, S.; Chiussi, S.; Schulze, J.

In: Journal of Applied Physics, Vol. 117, No. 12, 125706, 28.03.2015.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal