Multi-stacks of epitaxial GeSn self-assembled dots in Si : Structural analysis
Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
Author(s)
Detail(s)
| Original language | English |
|---|---|
| Article number | 125706 |
| Journal / Publication | Journal of Applied Physics |
| Volume | 117 |
| Issue number | 12 |
| Publication status | Published - 28 Mar 2015 |
| Externally published | Yes |
Link(s)
Abstract
We report on the growth and structural and morphologic characterization of stacked layers of self-assembled GeSn dots grown on Si (100) substrates by molecular beam epitaxy at low substrate temperature T = 350°C. Samples consist of layers (from 1 up to 10) of Ge0.96Sn0.04 self-assembled dots separated by Si spacer layers, 10nm thick. Their structural analysis was performed based on transmission electron microscopy, atomic force microscopy, and Raman scattering. We found that up to 4 stacks of dots could be grown with good dot layer homogeneity, making the GeSn dots interesting candidates for optoelectronic device applications.
Citation Format(s)
Multi-stacks of epitaxial GeSn self-assembled dots in Si : Structural analysis. / Oliveira, F.; Fischer, I. A.; Benedetti, A. et al.
In: Journal of Applied Physics, Vol. 117, No. 12, 125706, 28.03.2015.Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
