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Multiple Cations Interdiffusion in In0.53Ga0.47As/In0.52Al0.48As Quantum Well

  • Y. Chan
  • , W.C. Shiu
  • , W.K. Tsui
  • , E. Herbert Li

Research output: Chapters, Conference Papers, Creative and Literary WorksRGC 32 - Refereed conference paper (with host publication)peer-review

Abstract

Multiple cations interdiffusion in In0.53Ga0.47As/In0.52Al0.48As quantum well (QW) structure is investigated by using the model of expanded form of Fick's second law. The model is fitted to the measured concentration data in order to determine their diffusion coefficients. Once the concentration distribution is obtained, the types of strain and their variation across the QW can be determined, thus the subbands and transitions can be gathered. Result shows interesting phenomena due to this three species interdiffusion.
Original languageEnglish
Title of host publicationInfrared Applications of Semiconductors
EditorsFrançois H. Julien, M. Omar Manasreh, Thomas H. Myers
PublisherMaterials Research Society
Pages377-382
ISBN (Print)9781558993549
Publication statusPublished - Mar 1997
Externally publishedYes
Event1996 MRS Fall Meeting - Boston, MA, USA
Duration: 2 Dec 19965 Dec 1996

Publication series

NameMaterials Research Society Symposium Proceedings
Volume450
ISSN (Print)0272-9172

Conference

Conference1996 MRS Fall Meeting
CityBoston, MA, USA
Period2/12/965/12/96

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