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Multilevel characteristics for bipolar resistive random access memory based on hafnium doped SiO2 switching layer

  • Jiaji Wu
  • , Cong Ye*
  • , Jieqiong Zhang
  • , Tengfei Deng
  • , Pin He
  • , Hao Wang*
    • *Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

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