Multiband modification of III-V dilute nitrides for IBSC application

Nazmul Ahsan; Naoya Miyashita; Kin Man Yu; Wladek Walukiewicz; Yoshitaka Okada

doi:10.1117/12.2250700

Multiband modification of III-V dilute nitrides for IBSC application

Nazmul Ahsan
, Naoya Miyashita
, Kin Man Yu
, Wladek Walukiewicz
, Yoshitaka Okada

City University of Hong Kong

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

3 Citations (Scopus)

Abstract

The subband features E₊ and E₊ for the conduction band of III-V dilute nitride alloys make them promising for intermediate band solar cell application. However, presence of bandgap states can limit the two-step photon absorption activity, a necessary requirement for IBSC functionality. A model analysis is performed to characterize the density of states. The sub-band tails states are characterized using a temperature-dependent map of photo-modulated reflectance spectroscopy for GaNAs thin films grown on GaAs substrates using molecular beam epitaxy. The effect of indium and antimony incorporation on the subband features were investigated. Marked improvements in the thin films were observed both for the lower (E₊) and the upper (E+) conduction bands (CB) when In was introduced with marginal enhancement by Sb. These improvements are associated with suppression of tail states below both the E₊ and E₊ bands. Sb rather mainly plays a surfactant role improving the abruptness of the GaNAs/GaAs hetero-interface.

Original language	English
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering
Publisher	SPIE
Volume	10099
ISBN (Print)	9781510606395
DOIs	https://doi.org/10.1117/12.2250700
Publication status	Published - Mar 2017
Event	Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VI 2017 - San Francisco, United States Duration: 30 Jan 2017 → 1 Feb 2017

Publication series

Name
Volume	10099
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Conference

Conference	Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VI 2017
Place	United States
City	San Francisco
Period	30/01/17 → 1/02/17

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Research Keywords

highly mismatched alloys
III-V dilute nitride semiconductors
Infrared device
Intermediate band solar cell
molecular beam epitaxy
PV converter
two-step photon absorption

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10.1117/12.2250700

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Cite this

@inproceedings{101f0a99b2b24285b3e238a6deeeca76,

title = "Multiband modification of III-V dilute nitrides for IBSC application",

abstract = "The subband features E+ and E+ for the conduction band of III-V dilute nitride alloys make them promising for intermediate band solar cell application. However, presence of bandgap states can limit the two-step photon absorption activity, a necessary requirement for IBSC functionality. A model analysis is performed to characterize the density of states. The sub-band tails states are characterized using a temperature-dependent map of photo-modulated reflectance spectroscopy for GaNAs thin films grown on GaAs substrates using molecular beam epitaxy. The effect of indium and antimony incorporation on the subband features were investigated. Marked improvements in the thin films were observed both for the lower (E+) and the upper (E+) conduction bands (CB) when In was introduced with marginal enhancement by Sb. These improvements are associated with suppression of tail states below both the E+ and E+ bands. Sb rather mainly plays a surfactant role improving the abruptness of the GaNAs/GaAs hetero-interface.",

keywords = "highly mismatched alloys, III-V dilute nitride semiconductors, Infrared device, Intermediate band solar cell, molecular beam epitaxy, PV converter, two-step photon absorption",

author = "Nazmul Ahsan and Naoya Miyashita and Yu, \{Kin Man\} and Wladek Walukiewicz and Yoshitaka Okada",

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volume = "10099",

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booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

address = "United States",

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Ahsan, N, Miyashita, N, Yu, KM, Walukiewicz, W & Okada, Y 2017, Multiband modification of III-V dilute nitrides for IBSC application. in Proceedings of SPIE - The International Society for Optical Engineering. vol. 10099, 100990I, SPIE, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VI 2017, San Francisco, United States, 30/01/17. https://doi.org/10.1117/12.2250700

Multiband modification of III-V dilute nitrides for IBSC application. / Ahsan, Nazmul; Miyashita, Naoya; Yu, Kin Man et al.
Proceedings of SPIE - The International Society for Optical Engineering. Vol. 10099 SPIE, 2017. 100990I.

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

TY - GEN

T1 - Multiband modification of III-V dilute nitrides for IBSC application

AU - Ahsan, Nazmul

AU - Miyashita, Naoya

AU - Yu, Kin Man

AU - Walukiewicz, Wladek

AU - Okada, Yoshitaka

PY - 2017/3

Y1 - 2017/3

N2 - The subband features E+ and E+ for the conduction band of III-V dilute nitride alloys make them promising for intermediate band solar cell application. However, presence of bandgap states can limit the two-step photon absorption activity, a necessary requirement for IBSC functionality. A model analysis is performed to characterize the density of states. The sub-band tails states are characterized using a temperature-dependent map of photo-modulated reflectance spectroscopy for GaNAs thin films grown on GaAs substrates using molecular beam epitaxy. The effect of indium and antimony incorporation on the subband features were investigated. Marked improvements in the thin films were observed both for the lower (E+) and the upper (E+) conduction bands (CB) when In was introduced with marginal enhancement by Sb. These improvements are associated with suppression of tail states below both the E+ and E+ bands. Sb rather mainly plays a surfactant role improving the abruptness of the GaNAs/GaAs hetero-interface.

AB - The subband features E+ and E+ for the conduction band of III-V dilute nitride alloys make them promising for intermediate band solar cell application. However, presence of bandgap states can limit the two-step photon absorption activity, a necessary requirement for IBSC functionality. A model analysis is performed to characterize the density of states. The sub-band tails states are characterized using a temperature-dependent map of photo-modulated reflectance spectroscopy for GaNAs thin films grown on GaAs substrates using molecular beam epitaxy. The effect of indium and antimony incorporation on the subband features were investigated. Marked improvements in the thin films were observed both for the lower (E+) and the upper (E+) conduction bands (CB) when In was introduced with marginal enhancement by Sb. These improvements are associated with suppression of tail states below both the E+ and E+ bands. Sb rather mainly plays a surfactant role improving the abruptness of the GaNAs/GaAs hetero-interface.

KW - highly mismatched alloys

KW - III-V dilute nitride semiconductors

KW - Infrared device

KW - Intermediate band solar cell

KW - molecular beam epitaxy

KW - PV converter

KW - two-step photon absorption

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SN - 9781510606395

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BT - Proceedings of SPIE - The International Society for Optical Engineering

PB - SPIE

T2 - Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VI 2017

Y2 - 30 January 2017 through 1 February 2017

ER -

Multiband modification of III-V dilute nitrides for IBSC application

Abstract

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Research Keywords

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