Multiband Hot Photoluminescence from Nanocavity-Embedded Silicon Nanowire Arrays with Tunable Wavelength

Zhiqiang Mu; Haochi Yu; Miao Zhang; Aimin Wu; Gongmin Qi; Paul K. Chu; Zhenghua An; Zengfeng Di; Xi Wang

doi:10.1021/acs.nanolett.6b04675

Multiband Hot Photoluminescence from Nanocavity-Embedded Silicon Nanowire Arrays with Tunable Wavelength

Zhiqiang Mu, Haochi Yu, Miao Zhang, Aimin Wu, Gongmin Qi, Paul K. Chu, Zhenghua An^*, Zengfeng Di^*, Xi Wang

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

15 Citations (Scopus)

Abstract

Besides the well-known quantum confinement effect, hot luminescence from indirect bandgap Si provides a new and promising approach to realize monolithically integrated silicon optoelectronics due to phonon-assisted light emission. In this work, multiband hot photoluminescence is generated from Si nanowire arrays by introducing trapezoid-shaped nanocavities that support hybrid photonic-plasmonic modes. By continuously adjusting the geometric parameters of the Si nanowires with trapezoidal nanocavities, the multiband hot photoluminescence can be tuned in the range from visible to near-infrared independent of the excitation laser wavelength. The highly tunable wavelength bands and concomitant compatibility with Si-integrated electronics enable tailoring of silicon-based light sources suitable for next-generation optoelectronics devices.

Original language	English
Pages (from-to)	1552-1558
Journal	Nano Letters
Volume	17
Issue number	3
DOIs	https://doi.org/10.1021/acs.nanolett.6b04675
Publication status	Published - 8 Mar 2017

Research Keywords

Hot luminescence
nanocavities
resonance mode
Si nanowires
surface plasmon
tunable wavelength

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10.1021/acs.nanolett.6b04675

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@article{e494ba8026524fa1be7b6441225c5382,

title = "Multiband Hot Photoluminescence from Nanocavity-Embedded Silicon Nanowire Arrays with Tunable Wavelength",

abstract = "Besides the well-known quantum confinement effect, hot luminescence from indirect bandgap Si provides a new and promising approach to realize monolithically integrated silicon optoelectronics due to phonon-assisted light emission. In this work, multiband hot photoluminescence is generated from Si nanowire arrays by introducing trapezoid-shaped nanocavities that support hybrid photonic-plasmonic modes. By continuously adjusting the geometric parameters of the Si nanowires with trapezoidal nanocavities, the multiband hot photoluminescence can be tuned in the range from visible to near-infrared independent of the excitation laser wavelength. The highly tunable wavelength bands and concomitant compatibility with Si-integrated electronics enable tailoring of silicon-based light sources suitable for next-generation optoelectronics devices.",

keywords = "Hot luminescence, nanocavities, resonance mode, Si nanowires, surface plasmon, tunable wavelength",

author = "Zhiqiang Mu and Haochi Yu and Miao Zhang and Aimin Wu and Gongmin Qi and Chu, {Paul K.} and Zhenghua An and Zengfeng Di and Xi Wang",

year = "2017",

month = mar,

day = "8",

doi = "10.1021/acs.nanolett.6b04675",

language = "English",

volume = "17",

pages = "1552--1558",

journal = "Nano Letters",

issn = "1530-6984",

publisher = "American Chemical Society",

number = "3",

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TY - JOUR

T1 - Multiband Hot Photoluminescence from Nanocavity-Embedded Silicon Nanowire Arrays with Tunable Wavelength

AU - Mu, Zhiqiang

AU - Yu, Haochi

AU - Zhang, Miao

AU - Wu, Aimin

AU - Qi, Gongmin

AU - Chu, Paul K.

AU - An, Zhenghua

AU - Di, Zengfeng

AU - Wang, Xi

PY - 2017/3/8

Y1 - 2017/3/8

N2 - Besides the well-known quantum confinement effect, hot luminescence from indirect bandgap Si provides a new and promising approach to realize monolithically integrated silicon optoelectronics due to phonon-assisted light emission. In this work, multiband hot photoluminescence is generated from Si nanowire arrays by introducing trapezoid-shaped nanocavities that support hybrid photonic-plasmonic modes. By continuously adjusting the geometric parameters of the Si nanowires with trapezoidal nanocavities, the multiband hot photoluminescence can be tuned in the range from visible to near-infrared independent of the excitation laser wavelength. The highly tunable wavelength bands and concomitant compatibility with Si-integrated electronics enable tailoring of silicon-based light sources suitable for next-generation optoelectronics devices.

AB - Besides the well-known quantum confinement effect, hot luminescence from indirect bandgap Si provides a new and promising approach to realize monolithically integrated silicon optoelectronics due to phonon-assisted light emission. In this work, multiband hot photoluminescence is generated from Si nanowire arrays by introducing trapezoid-shaped nanocavities that support hybrid photonic-plasmonic modes. By continuously adjusting the geometric parameters of the Si nanowires with trapezoidal nanocavities, the multiband hot photoluminescence can be tuned in the range from visible to near-infrared independent of the excitation laser wavelength. The highly tunable wavelength bands and concomitant compatibility with Si-integrated electronics enable tailoring of silicon-based light sources suitable for next-generation optoelectronics devices.

KW - Hot luminescence

KW - nanocavities

KW - resonance mode

KW - Si nanowires

KW - surface plasmon

KW - tunable wavelength

UR - http://www.scopus.com/inward/record.url?scp=85014929835&partnerID=8YFLogxK

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-85014929835&origin=recordpage

U2 - 10.1021/acs.nanolett.6b04675

DO - 10.1021/acs.nanolett.6b04675

M3 - RGC 21 - Publication in refereed journal

SN - 1530-6984

VL - 17

SP - 1552

EP - 1558

JO - Nano Letters

JF - Nano Letters

IS - 3

ER -

Multiband Hot Photoluminescence from Nanocavity-Embedded Silicon Nanowire Arrays with Tunable Wavelength

Abstract

Research Keywords

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