MOSFETs

Hiroshi Iwai; Simon Min Sze; Yuan Taur; Hei Wong

doi:10.1002/9781118517543.ch2

MOSFETs

Hiroshi Iwai
, Simon Min Sze
, Yuan Taur
, Hei Wong

Department of Electrical Engineering

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 12 - Chapter in an edited book (Author) › peer-review

19 Citations (Scopus)

Abstract

MOSFET is a kind of transistor in which the current control terminal consists of insulated gate stack. It is the most fundamental, common, and the smallest electronic device ever manufactured. The explosive advances in integrated circuits have been made possible by continuous down-scaling of this elemental device size. In order to pursue the scaling trend for next several generations, new technologies such as high-k gate insulator, metal source/drain, multiple gate structure including nanowire, and possibly III-V/Ge channel are being developed. © 2013 John Wiley & Sons, Ltd

Original language	English
Title of host publication	Guide to State-of-the-Art Electron Devices
Editors	Joachim N. Burghartz
Publisher	John Wiley & Sons
Pages	21-36
ISBN (Electronic)	9781118517543
ISBN (Print)	9781118347263
DOIs	https://doi.org/10.1002/9781118517543.ch2
Publication status	Published - 2013

Bibliographical note

Full text of this publication does not contain sufficient affiliation information. With consent from the author(s) concerned, the Research Unit(s) information for this record is based on the existing academic department affiliation of the author(s).

Research Keywords

Drain
Electron
Gate
High-k
Hole
MOSFET
Nanowire
Scaling
Source
Substrate

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abstract = "MOSFET is a kind of transistor in which the current control terminal consists of insulated gate stack. It is the most fundamental, common, and the smallest electronic device ever manufactured. The explosive advances in integrated circuits have been made possible by continuous down-scaling of this elemental device size. In order to pursue the scaling trend for next several generations, new technologies such as high-k gate insulator, metal source/drain, multiple gate structure including nanowire, and possibly III-V/Ge channel are being developed. {\textcopyright} 2013 John Wiley \& Sons, Ltd",

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AU - Sze, Simon Min

AU - Taur, Yuan

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AB - MOSFET is a kind of transistor in which the current control terminal consists of insulated gate stack. It is the most fundamental, common, and the smallest electronic device ever manufactured. The explosive advances in integrated circuits have been made possible by continuous down-scaling of this elemental device size. In order to pursue the scaling trend for next several generations, new technologies such as high-k gate insulator, metal source/drain, multiple gate structure including nanowire, and possibly III-V/Ge channel are being developed. © 2013 John Wiley & Sons, Ltd

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KW - Hole

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KW - Nanowire

KW - Scaling

KW - Source

KW - Substrate

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BT - Guide to State-of-the-Art Electron Devices

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ER -

MOSFETs

Abstract

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Research Keywords

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