MoO3 nanoplatelets based Schottky diode for low-noise sensors in harsh envionments

Tianding Chen; Weiting Kuo; Jerry Yu; Derek Ho

doi:10.1109/EDSSC.2016.7785308

MoO₃ nanoplatelets based Schottky diode for low-noise sensors in harsh envionments

Tianding Chen
, Weiting Kuo
, Jerry Yu
, Derek Ho^*

^*Corresponding author for this work

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

2 Citations (Scopus)

Abstract

High-temperature harsh environments demand sensors with thermodynamically stable properties. This paper presents a thermal dynamically stable, low noise Schottky diode based on nanostructured MoO₃ nanoplatelets. Diode I-V characteristics, barrier height, and series resistance under different temperatures were investigated. Low diode turn-on voltage enables low power operation. MoO₃ nanoplatelets with length, width, and thickness of 6.7 μm, 3.1μm, and 0.4 μm provide a significantly improved surface area-to-volume ratio, which is advantageous in high-sensitivity sensor applications.

Original language	English
Title of host publication	2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016
Publisher	IEEE
Pages	464-467
ISBN (Print)	9781509018307
DOIs	https://doi.org/10.1109/EDSSC.2016.7785308
Publication status	Published - 15 Dec 2016
Event	2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016 - Hong Kong, Hong Kong, China Duration: 3 Aug 2016 → 5 Aug 2016

Conference

Conference	2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016
Place	Hong Kong, China
City	Hong Kong
Period	3/08/16 → 5/08/16

Research Keywords

barrier height
harsh environment
low-noise
MoO3
nanoplatelets
Schottky diode
sensor
thermal evaporation

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10.1109/EDSSC.2016.7785308

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Cite this

@inproceedings{fa0999036afa4badba1579c215bb32e3,

title = "MoO3 nanoplatelets based Schottky diode for low-noise sensors in harsh envionments",

abstract = "High-temperature harsh environments demand sensors with thermodynamically stable properties. This paper presents a thermal dynamically stable, low noise Schottky diode based on nanostructured MoO3 nanoplatelets. Diode I-V characteristics, barrier height, and series resistance under different temperatures were investigated. Low diode turn-on voltage enables low power operation. MoO3 nanoplatelets with length, width, and thickness of 6.7 μm, 3.1μm, and 0.4 μm provide a significantly improved surface area-to-volume ratio, which is advantageous in high-sensitivity sensor applications.",

keywords = "barrier height, harsh environment, low-noise, MoO3, nanoplatelets, Schottky diode, sensor, thermal evaporation",

author = "Tianding Chen and Weiting Kuo and Jerry Yu and Derek Ho",

year = "2016",

month = dec,

day = "15",

doi = "10.1109/EDSSC.2016.7785308",

language = "English",

isbn = "9781509018307",

pages = "464--467",

booktitle = "2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016",

publisher = "IEEE",

address = "United States",

note = "2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016 ; Conference date: 03-08-2016 Through 05-08-2016",

}

Chen, T, Kuo, W, Yu, J & Ho, D 2016, MoO₃ nanoplatelets based Schottky diode for low-noise sensors in harsh envionments. in 2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016., 7785308, IEEE, pp. 464-467, 2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016, Hong Kong, Hong Kong, China, 3/08/16. https://doi.org/10.1109/EDSSC.2016.7785308

MoO₃ nanoplatelets based Schottky diode for low-noise sensors in harsh envionments. / Chen, Tianding; Kuo, Weiting; Yu, Jerry et al.
2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016. IEEE, 2016. p. 464-467 7785308.

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

TY - GEN

T1 - MoO3 nanoplatelets based Schottky diode for low-noise sensors in harsh envionments

AU - Chen, Tianding

AU - Kuo, Weiting

AU - Yu, Jerry

AU - Ho, Derek

PY - 2016/12/15

Y1 - 2016/12/15

N2 - High-temperature harsh environments demand sensors with thermodynamically stable properties. This paper presents a thermal dynamically stable, low noise Schottky diode based on nanostructured MoO3 nanoplatelets. Diode I-V characteristics, barrier height, and series resistance under different temperatures were investigated. Low diode turn-on voltage enables low power operation. MoO3 nanoplatelets with length, width, and thickness of 6.7 μm, 3.1μm, and 0.4 μm provide a significantly improved surface area-to-volume ratio, which is advantageous in high-sensitivity sensor applications.

AB - High-temperature harsh environments demand sensors with thermodynamically stable properties. This paper presents a thermal dynamically stable, low noise Schottky diode based on nanostructured MoO3 nanoplatelets. Diode I-V characteristics, barrier height, and series resistance under different temperatures were investigated. Low diode turn-on voltage enables low power operation. MoO3 nanoplatelets with length, width, and thickness of 6.7 μm, 3.1μm, and 0.4 μm provide a significantly improved surface area-to-volume ratio, which is advantageous in high-sensitivity sensor applications.

KW - barrier height

KW - harsh environment

KW - low-noise

KW - MoO3

KW - nanoplatelets

KW - Schottky diode

KW - sensor

KW - thermal evaporation

UR - https://www.scopus.com/pages/publications/85010281203

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U2 - 10.1109/EDSSC.2016.7785308

DO - 10.1109/EDSSC.2016.7785308

M3 - RGC 32 - Refereed conference paper (with host publication)

SN - 9781509018307

SP - 464

EP - 467

BT - 2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016

PB - IEEE

T2 - 2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016

Y2 - 3 August 2016 through 5 August 2016

ER -