Molecular Reconfiguration of Disordered Tellurium Oxide Transistors with Biomimetic Spectral Selectivity

Yuxuan Zhang, Jingwen Wang, Pengshan Xie, You Meng, He Shao, ChenXing Jin, Boxiang Gao, Yi Shen, Quan Quan, Yezhan Li, Weijun Wang, Dengji Li, Zenghui Wu, Bowen Li, SenPo Yip, Jia Sun*, Johnny C. Ho*

*Corresponding author for this work

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

Abstract

Reconfigurable devices with field-effect transistor features and neuromorphic behaviors are promising for enhancing data processing capability and reducing power consumption in next-generation semiconductor platforms. However, commonly used 2D materials for reconfigurable devices require additional modulation terminals and suffer from complex and stringent operating rules to obtain specific functionalities. Here, a p-type disordered tellurium oxide is introduced that realizes dual-mode reconfigurability as a logic transistor and a neuromorphic device. Due to the disordered film surface, the enhanced adsorption of oxygen molecules and laser-induced desorption concurrently regulate the carrier concentration in the channel. The device exhibits high-performance p-type characteristics with a field-effect hole mobility of 10.02 cm2 V−1 s−1 and an Ion/Ioff ratio exceeding 106 in the transistor mode. As a neuromorphic device, the vision system exhibits biomimetic bee vision, explicitly responding to the blue-to-ultraviolet light. Finally, in-sensor denoising and invisible image recognition in static and dynamic scenarios are achieved. © 2024 Wiley-VCH GmbH
Original languageEnglish
Article number2412210
JournalAdvanced Materials
DOIs
Publication statusOnline published - 17 Oct 2024

Funding

Y.Z. and J.W. contributed equally to this work. This work was supported by a fellowship award from the Research Grants Council of the Hong Kong Special Administrative Region, China (CityU RFS2021−1S04) and the Innovation and Technology Fund (MHP/044/23) from the Innovation and Technology Commission of the Hong Kong Special Administrative Region, China.

Research Keywords

  • amorphous oxide semiconductor
  • logic gate
  • neuromorphic vision device
  • p-type transistor
  • reconfigurable device

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