TY - JOUR
T1 - Molecular Reconfiguration of Disordered Tellurium Oxide Transistors with Biomimetic Spectral Selectivity
AU - Zhang, Yuxuan
AU - Wang, Jingwen
AU - Xie, Pengshan
AU - Meng, You
AU - Shao, He
AU - Jin, ChenXing
AU - Gao, Boxiang
AU - Shen, Yi
AU - Quan, Quan
AU - Li, Yezhan
AU - Wang, Weijun
AU - Li, Dengji
AU - Wu, Zenghui
AU - Li, Bowen
AU - Yip, SenPo
AU - Sun, Jia
AU - Ho, Johnny C.
PY - 2024/10/17
Y1 - 2024/10/17
N2 - Reconfigurable devices with field-effect transistor features and neuromorphic behaviors are promising for enhancing data processing capability and reducing power consumption in next-generation semiconductor platforms. However, commonly used 2D materials for reconfigurable devices require additional modulation terminals and suffer from complex and stringent operating rules to obtain specific functionalities. Here, a p-type disordered tellurium oxide is introduced that realizes dual-mode reconfigurability as a logic transistor and a neuromorphic device. Due to the disordered film surface, the enhanced adsorption of oxygen molecules and laser-induced desorption concurrently regulate the carrier concentration in the channel. The device exhibits high-performance p-type characteristics with a field-effect hole mobility of 10.02 cm2 V−1 s−1 and an Ion/Ioff ratio exceeding 106 in the transistor mode. As a neuromorphic device, the vision system exhibits biomimetic bee vision, explicitly responding to the blue-to-ultraviolet light. Finally, in-sensor denoising and invisible image recognition in static and dynamic scenarios are achieved. © 2024 Wiley-VCH GmbH
AB - Reconfigurable devices with field-effect transistor features and neuromorphic behaviors are promising for enhancing data processing capability and reducing power consumption in next-generation semiconductor platforms. However, commonly used 2D materials for reconfigurable devices require additional modulation terminals and suffer from complex and stringent operating rules to obtain specific functionalities. Here, a p-type disordered tellurium oxide is introduced that realizes dual-mode reconfigurability as a logic transistor and a neuromorphic device. Due to the disordered film surface, the enhanced adsorption of oxygen molecules and laser-induced desorption concurrently regulate the carrier concentration in the channel. The device exhibits high-performance p-type characteristics with a field-effect hole mobility of 10.02 cm2 V−1 s−1 and an Ion/Ioff ratio exceeding 106 in the transistor mode. As a neuromorphic device, the vision system exhibits biomimetic bee vision, explicitly responding to the blue-to-ultraviolet light. Finally, in-sensor denoising and invisible image recognition in static and dynamic scenarios are achieved. © 2024 Wiley-VCH GmbH
KW - amorphous oxide semiconductor
KW - logic gate
KW - neuromorphic vision device
KW - p-type transistor
KW - reconfigurable device
UR - https://www.webofscience.com/wos/woscc/full-record/WOS:001334325700001
UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-85206487059&origin=recordpage
UR - http://www.scopus.com/inward/record.url?scp=85206487059&partnerID=8YFLogxK
U2 - 10.1002/adma.202412210
DO - 10.1002/adma.202412210
M3 - RGC 21 - Publication in refereed journal
SN - 0935-9648
JO - Advanced Materials
JF - Advanced Materials
M1 - 2412210
ER -