Molecular beam epitaxy of InGaN thin films on Si(111) : Effect of substrate nitridation
Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
Author(s)
Detail(s)
Original language | English |
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Pages (from-to) | 6512-6515 |
Journal / Publication | Thin Solid Films |
Volume | 517 |
Issue number | 24 |
Publication status | Published - 30 Oct 2009 |
Externally published | Yes |
Link(s)
Abstract
The effect of silicon nitridation on structural quality, indium incorporation, and electrical properties of the InGaN/Si heterojunctions is investigated. A series of InxGa1 - xN (x = 0-0.32) thin films are grown directly on Si(111) substrates, with and without a SixNy surface layer, by plasma-assisted molecular beam epitaxy. The crystalline quality is higher and the indium incorporation is increased when the InxGa1 - xN thin films are grown with the intentional SixNy buffer. These observations are explained by the reduced local elastic stress at the interface and N-polarity of the surface, both of which promote the incorporation of In. The obtained n-InxGa1 - xN/p-Si (x = 0.2-0.3) heterojunctions exhibit a nearly ohmic behavior, and the series resistance is higher for the SixNy-containing junctions. Our results suggest that unlike the amorphous SixNy region spontaneously formed during direct deposition of III-nitrides on Si, the SixNy layer obtained by high-temperature annealing of Si(111) in nitrogen atmosphere is beneficial to the InxGa1 - xN deposition. © 2009 Elsevier B.V. All rights reserved.
Research Area(s)
- Gallium nitride, Molecular beam epitaxy, Nitridation, Silicon
Citation Format(s)
Molecular beam epitaxy of InGaN thin films on Si(111) : Effect of substrate nitridation. / Romanyuk, Yaroslav E.; Kreier, Daniel; Cui, Yi; Yu, Kin Man; Ager III, Joel W.; Leone, Stephen R.
In: Thin Solid Films, Vol. 517, No. 24, 30.10.2009, p. 6512-6515.Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review