Molecular beam epitaxy of InGaN thin films on Si(111) : Effect of substrate nitridation

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal

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Author(s)

  • Yaroslav E. Romanyuk
  • Daniel Kreier
  • Yi Cui
  • Joel W. Ager III
  • Stephen R. Leone

Detail(s)

Original languageEnglish
Pages (from-to)6512-6515
Journal / PublicationThin Solid Films
Volume517
Issue number24
Publication statusPublished - 30 Oct 2009
Externally publishedYes

Abstract

The effect of silicon nitridation on structural quality, indium incorporation, and electrical properties of the InGaN/Si heterojunctions is investigated. A series of InxGa1 - xN (x = 0-0.32) thin films are grown directly on Si(111) substrates, with and without a SixNy surface layer, by plasma-assisted molecular beam epitaxy. The crystalline quality is higher and the indium incorporation is increased when the InxGa1 - xN thin films are grown with the intentional SixNy buffer. These observations are explained by the reduced local elastic stress at the interface and N-polarity of the surface, both of which promote the incorporation of In. The obtained n-InxGa1 - xN/p-Si (x = 0.2-0.3) heterojunctions exhibit a nearly ohmic behavior, and the series resistance is higher for the SixNy-containing junctions. Our results suggest that unlike the amorphous SixNy region spontaneously formed during direct deposition of III-nitrides on Si, the SixNy layer obtained by high-temperature annealing of Si(111) in nitrogen atmosphere is beneficial to the InxGa1 - xN deposition. © 2009 Elsevier B.V. All rights reserved.

Research Area(s)

  • Gallium nitride, Molecular beam epitaxy, Nitridation, Silicon

Citation Format(s)

Molecular beam epitaxy of InGaN thin films on Si(111) : Effect of substrate nitridation. / Romanyuk, Yaroslav E.; Kreier, Daniel; Cui, Yi; Yu, Kin Man; Ager III, Joel W.; Leone, Stephen R.

In: Thin Solid Films, Vol. 517, No. 24, 30.10.2009, p. 6512-6515.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal