Molecular beam epitaxy of crystalline and amorphous GaN layers with high As content

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • S. V. Novikov
  • C. R. Staddon
  • A. V. Akimov
  • R. P. Campion
  • N. Zainal
  • A. J. Kent
  • C. T. Foxon
  • C. H. Chen
  • W. Walukiewicz

Detail(s)

Original languageEnglish
Pages (from-to)3417-3422
Journal / PublicationJournal of Crystal Growth
Volume311
Issue number13
Publication statusPublished - 15 Jun 2009
Externally publishedYes

Abstract

We have studied the low-temperature growth of gallium nitride arsenide (GaN)As layers on sapphire substrates by plasma-assisted molecular beam epitaxy. We have succeeded in achieving GaN1-xAsx alloys over a large composition range by growing the films much below the normal GaN growth temperatures with increasing the As2 flux as well as Ga:N flux ratio. We found that alloys with high As content x>0.1 are amorphous and those with x1-xAsx alloys follows the prediction of the band anticrossing model developed for dilute alloys. This suggests that the amorphous GaN1-xAsx alloys have short-range ordering that resembles random crystalline GaN1-xAsx alloys. © 2009 Elsevier B.V.

Research Area(s)

  • A3. Molecular beam epitaxy, B1. Nitrides, B2. Semiconducting III-V materials

Citation Format(s)

Molecular beam epitaxy of crystalline and amorphous GaN layers with high As content. / Novikov, S. V.; Staddon, C. R.; Akimov, A. V.; Campion, R. P.; Zainal, N.; Kent, A. J.; Foxon, C. T.; Chen, C. H.; Yu, K. M.; Walukiewicz, W.

In: Journal of Crystal Growth, Vol. 311, No. 13, 15.06.2009, p. 3417-3422.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review