Molecular beam epitaxy of crystalline and amorphous GaN layers with high As content

S. V. Novikov; C. R. Staddon; A. V. Akimov; R. P. Campion; N. Zainal; A. J. Kent; C. T. Foxon; C. H. Chen; K. M. Yu; W. Walukiewicz

doi:10.1016/j.jcrysgro.2009.04.010

Author(s)

S. V. Novikov
C. R. Staddon
A. V. Akimov
R. P. Campion
N. Zainal
A. J. Kent
C. T. Foxon
C. H. Chen
W. Walukiewicz

Detail(s)

Original language	English
Pages (from-to)	3417-3422
Journal / Publication	Journal of Crystal Growth
Volume	311
Issue number	13
Publication status	Published - 15 Jun 2009
Externally published	Yes

Link(s)

DOI	DOI https://doi.org/10.1016/j.jcrysgro.2009.04.010 Final Published version
	Check@CityULib
Link to Scopus	https://www.scopus.com/record/display.uri?eid=2-s2.0-66649102412&origin=recordpage
Permanent Link	https://scholars.cityu.edu.hk/en/publications/publication(c71e8371-67dd-4878-8098-ea13e1ca3a00).html

Abstract

We have studied the low-temperature growth of gallium nitride arsenide (GaN)As layers on sapphire substrates by plasma-assisted molecular beam epitaxy. We have succeeded in achieving GaN_1-xAs_x alloys over a large composition range by growing the films much below the normal GaN growth temperatures with increasing the As₂ flux as well as Ga:N flux ratio. We found that alloys with high As content x>0.1 are amorphous and those with x1-xAs_x alloys follows the prediction of the band anticrossing model developed for dilute alloys. This suggests that the amorphous GaN_1-xAs_x alloys have short-range ordering that resembles random crystalline GaN_1-xAs_x alloys. © 2009 Elsevier B.V.

Research Area(s)

A3. Molecular beam epitaxy, B1. Nitrides, B2. Semiconducting III-V materials

Citation Format(s)

[ RIS ] [ BibTeX ]

Molecular beam epitaxy of crystalline and amorphous GaN layers with high As content. / Novikov, S. V.; Staddon, C. R.; Akimov, A. V. et al.
In: Journal of Crystal Growth, Vol. 311, No. 13, 15.06.2009, p. 3417-3422.

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

Novikov, SV, Staddon, CR, Akimov, AV, Campion, RP, Zainal, N, Kent, AJ, Foxon, CT, Chen, CH, Yu, KM & Walukiewicz, W 2009, 'Molecular beam epitaxy of crystalline and amorphous GaN layers with high As content', Journal of Crystal Growth, vol. 311, no. 13, pp. 3417-3422. https://doi.org/10.1016/j.jcrysgro.2009.04.010

Novikov, S. V., Staddon, C. R., Akimov, A. V., Campion, R. P., Zainal, N., Kent, A. J., Foxon, C. T., Chen, C. H., Yu, K. M., & Walukiewicz, W. (2009). Molecular beam epitaxy of crystalline and amorphous GaN layers with high As content. Journal of Crystal Growth, 311(13), 3417-3422. https://doi.org/10.1016/j.jcrysgro.2009.04.010

Novikov SV, Staddon CR, Akimov AV, Campion RP, Zainal N, Kent AJ et al. Molecular beam epitaxy of crystalline and amorphous GaN layers with high As content. Journal of Crystal Growth. 2009 Jun 15;311(13):3417-3422. doi: 10.1016/j.jcrysgro.2009.04.010

Novikov, S. V. ; Staddon, C. R. ; Akimov, A. V. et al. / Molecular beam epitaxy of crystalline and amorphous GaN layers with high As content. In: Journal of Crystal Growth. 2009 ; Vol. 311, No. 13. pp. 3417-3422.