Molecular beam epitaxy of crystalline and amorphous GaN layers with high As content
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
Author(s)
Detail(s)
Original language | English |
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Pages (from-to) | 3417-3422 |
Journal / Publication | Journal of Crystal Growth |
Volume | 311 |
Issue number | 13 |
Publication status | Published - 15 Jun 2009 |
Externally published | Yes |
Link(s)
Abstract
We have studied the low-temperature growth of gallium nitride arsenide (GaN)As layers on sapphire substrates by plasma-assisted molecular beam epitaxy. We have succeeded in achieving GaN1-xAsx alloys over a large composition range by growing the films much below the normal GaN growth temperatures with increasing the As2 flux as well as Ga:N flux ratio. We found that alloys with high As content x>0.1 are amorphous and those with x1-xAsx alloys follows the prediction of the band anticrossing model developed for dilute alloys. This suggests that the amorphous GaN1-xAsx alloys have short-range ordering that resembles random crystalline GaN1-xAsx alloys. © 2009 Elsevier B.V.
Research Area(s)
- A3. Molecular beam epitaxy, B1. Nitrides, B2. Semiconducting III-V materials
Citation Format(s)
Molecular beam epitaxy of crystalline and amorphous GaN layers with high As content. / Novikov, S. V.; Staddon, C. R.; Akimov, A. V. et al.
In: Journal of Crystal Growth, Vol. 311, No. 13, 15.06.2009, p. 3417-3422.
In: Journal of Crystal Growth, Vol. 311, No. 13, 15.06.2009, p. 3417-3422.
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review