Molecular beam epitaxy of crystalline and amorphous GaN layers with high As content

S. V. Novikov; C. R. Staddon; A. V. Akimov; R. P. Campion; N. Zainal; A. J. Kent; C. T. Foxon; C. H. Chen; K. M. Yu; W. Walukiewicz

doi:10.1016/j.jcrysgro.2009.04.010

Molecular beam epitaxy of crystalline and amorphous GaN layers with high As content

S. V. Novikov
, C. R. Staddon
, A. V. Akimov
, R. P. Campion
, N. Zainal
, A. J. Kent
, C. T. Foxon
, C. H. Chen
, K. M. Yu
, W. Walukiewicz

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

26 Citations (Scopus)

Abstract

We have studied the low-temperature growth of gallium nitride arsenide (GaN)As layers on sapphire substrates by plasma-assisted molecular beam epitaxy. We have succeeded in achieving GaN_1-xAs_x alloys over a large composition range by growing the films much below the normal GaN growth temperatures with increasing the As₂ flux as well as Ga:N flux ratio. We found that alloys with high As content x>0.1 are amorphous and those with x1-xAs_x alloys follows the prediction of the band anticrossing model developed for dilute alloys. This suggests that the amorphous GaN_1-xAs_x alloys have short-range ordering that resembles random crystalline GaN_1-xAs_x alloys. © 2009 Elsevier B.V.

Original language	English
Pages (from-to)	3417-3422
Journal	Journal of Crystal Growth
Volume	311
Issue number	13
DOIs	https://doi.org/10.1016/j.jcrysgro.2009.04.010
Publication status	Published - 15 Jun 2009
Externally published	Yes

Research Keywords

A3. Molecular beam epitaxy
B1. Nitrides
B2. Semiconducting III-V materials

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10.1016/j.jcrysgro.2009.04.010

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title = "Molecular beam epitaxy of crystalline and amorphous GaN layers with high As content",

abstract = "We have studied the low-temperature growth of gallium nitride arsenide (GaN)As layers on sapphire substrates by plasma-assisted molecular beam epitaxy. We have succeeded in achieving GaN1-xAsx alloys over a large composition range by growing the films much below the normal GaN growth temperatures with increasing the As2 flux as well as Ga:N flux ratio. We found that alloys with high As content x>0.1 are amorphous and those with x1-xAsx alloys follows the prediction of the band anticrossing model developed for dilute alloys. This suggests that the amorphous GaN1-xAsx alloys have short-range ordering that resembles random crystalline GaN1-xAsx alloys. {\textcopyright} 2009 Elsevier B.V.",

keywords = "A3. Molecular beam epitaxy, B1. Nitrides, B2. Semiconducting III-V materials",

author = "Novikov, \{S. V.\} and Staddon, \{C. R.\} and Akimov, \{A. V.\} and Campion, \{R. P.\} and N. Zainal and Kent, \{A. J.\} and Foxon, \{C. T.\} and Chen, \{C. H.\} and Yu, \{K. M.\} and W. Walukiewicz",

year = "2009",

month = jun,

day = "15",

doi = "10.1016/j.jcrysgro.2009.04.010",

language = "English",

volume = "311",

pages = "3417--3422",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

number = "13",

}

TY - JOUR

T1 - Molecular beam epitaxy of crystalline and amorphous GaN layers with high As content

AU - Novikov, S. V.

AU - Staddon, C. R.

AU - Akimov, A. V.

AU - Campion, R. P.

AU - Zainal, N.

AU - Kent, A. J.

AU - Foxon, C. T.

AU - Chen, C. H.

AU - Yu, K. M.

AU - Walukiewicz, W.

PY - 2009/6/15

Y1 - 2009/6/15

N2 - We have studied the low-temperature growth of gallium nitride arsenide (GaN)As layers on sapphire substrates by plasma-assisted molecular beam epitaxy. We have succeeded in achieving GaN1-xAsx alloys over a large composition range by growing the films much below the normal GaN growth temperatures with increasing the As2 flux as well as Ga:N flux ratio. We found that alloys with high As content x>0.1 are amorphous and those with x1-xAsx alloys follows the prediction of the band anticrossing model developed for dilute alloys. This suggests that the amorphous GaN1-xAsx alloys have short-range ordering that resembles random crystalline GaN1-xAsx alloys. © 2009 Elsevier B.V.

AB - We have studied the low-temperature growth of gallium nitride arsenide (GaN)As layers on sapphire substrates by plasma-assisted molecular beam epitaxy. We have succeeded in achieving GaN1-xAsx alloys over a large composition range by growing the films much below the normal GaN growth temperatures with increasing the As2 flux as well as Ga:N flux ratio. We found that alloys with high As content x>0.1 are amorphous and those with x1-xAsx alloys follows the prediction of the band anticrossing model developed for dilute alloys. This suggests that the amorphous GaN1-xAsx alloys have short-range ordering that resembles random crystalline GaN1-xAsx alloys. © 2009 Elsevier B.V.

KW - A3. Molecular beam epitaxy

KW - B1. Nitrides

KW - B2. Semiconducting III-V materials

UR - https://www.scopus.com/pages/publications/66649102412

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-66649102412&origin=recordpage

U2 - 10.1016/j.jcrysgro.2009.04.010

DO - 10.1016/j.jcrysgro.2009.04.010

M3 - RGC 21 - Publication in refereed journal

SN - 0022-0248

VL - 311

SP - 3417

EP - 3422

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 13

ER -

Molecular beam epitaxy of crystalline and amorphous GaN layers with high As content

Abstract

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