Molecular beam epitaxial growth of ZnCdTeO epilayers for intermediate band solar cells

Tooru Tanaka; Yasuhiro Nagao; Tomohiro Mochinaga; Katsuhiko Saito; Qixin Guo; Mitsuhiro Nishio; Kin M. Yu; Wladek Walukiewicz

doi:10.1016/j.jcrysgro.2012.12.086

Author(s)

Tooru Tanaka
Yasuhiro Nagao
Tomohiro Mochinaga
Katsuhiko Saito
Qixin Guo
Mitsuhiro Nishio
Wladek Walukiewicz

Detail(s)

Original language	English
Pages (from-to)	259-262
Journal / Publication	Journal of Crystal Growth
Volume	378
Publication status	Published - 2013
Externally published	Yes

Link(s)

DOI	DOI https://doi.org/10.1016/j.jcrysgro.2012.12.086 Final Published version
	Check@CityULib
Link to Scopus	https://www.scopus.com/record/display.uri?eid=2-s2.0-84885431506&origin=recordpage
Permanent Link	https://scholars.cityu.edu.hk/en/publications/publication(320a736b-a7ee-462e-97f3-c1ecd0e5c379).html

Abstract

We report the growth and characterization of the lattice-matched Zn _1-xCd_xTe_1yO_y (ZnCdTeO) layers on ZnTe substrates by radio frequency plasma-assisted molecular beam epitaxy technique. The Cd composition increases linearly with increasing Cd/(Zn+Cd) flux ratio, indicating a controllability of Cd composition by Cd flux. Introduction of O radical during the growth of ZnCdTe resulted in the formation of ZnCdTeO layer. At particular O and Cd compositions lattice-matched ZnCdTeO epilayers on ZnTe substrate were obtained. Photoreflectance (PR) spectroscopy on the lattice-matched ZnCdTeO layer revealed two distinct PR features in the energy regions at 2.2-2.5 eV and 1.5-1.8 eV, which can be attributed to transitions from the valence band to the two conduction subbands, E₊ and E-, respectively. © 2013 Elsevier B.V. All rights reserved.

Research Area(s)

Highly mismatched alloy, Intermediate band solar cells, Molecular beam epitaxy, Semiconducting II-VI materials

SDG 7 - Affordable and Clean Energy

Citation Format(s)

[ RIS ] [ BibTeX ]

Molecular beam epitaxial growth of ZnCdTeO epilayers for intermediate band solar cells. / Tanaka, Tooru; Nagao, Yasuhiro; Mochinaga, Tomohiro et al.
In: Journal of Crystal Growth, Vol. 378, 2013, p. 259-262.

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

Tanaka, T, Nagao, Y, Mochinaga, T, Saito, K, Guo, Q, Nishio, M, Yu, KM & Walukiewicz, W 2013, 'Molecular beam epitaxial growth of ZnCdTeO epilayers for intermediate band solar cells', Journal of Crystal Growth, vol. 378, pp. 259-262. https://doi.org/10.1016/j.jcrysgro.2012.12.086

Tanaka, T., Nagao, Y., Mochinaga, T., Saito, K., Guo, Q., Nishio, M., Yu, K. M., & Walukiewicz, W. (2013). Molecular beam epitaxial growth of ZnCdTeO epilayers for intermediate band solar cells. Journal of Crystal Growth, 378, 259-262. https://doi.org/10.1016/j.jcrysgro.2012.12.086

Tanaka T, Nagao Y, Mochinaga T, Saito K, Guo Q, Nishio M et al. Molecular beam epitaxial growth of ZnCdTeO epilayers for intermediate band solar cells. Journal of Crystal Growth. 2013;378:259-262. doi: 10.1016/j.jcrysgro.2012.12.086

Tanaka, Tooru ; Nagao, Yasuhiro ; Mochinaga, Tomohiro et al. / Molecular beam epitaxial growth of ZnCdTeO epilayers for intermediate band solar cells. In: Journal of Crystal Growth. 2013 ; Vol. 378. pp. 259-262.