Skip to main navigation Skip to search Skip to main content

Molecular beam epitaxial growth of ZnCdTeO epilayers for intermediate band solar cells

Tooru Tanaka, Yasuhiro Nagao, Tomohiro Mochinaga, Katsuhiko Saito, Qixin Guo, Mitsuhiro Nishio, Kin M. Yu, Wladek Walukiewicz

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

Abstract

We report the growth and characterization of the lattice-matched Zn 1-xCdxTe1yOy (ZnCdTeO) layers on ZnTe substrates by radio frequency plasma-assisted molecular beam epitaxy technique. The Cd composition increases linearly with increasing Cd/(Zn+Cd) flux ratio, indicating a controllability of Cd composition by Cd flux. Introduction of O radical during the growth of ZnCdTe resulted in the formation of ZnCdTeO layer. At particular O and Cd compositions lattice-matched ZnCdTeO epilayers on ZnTe substrate were obtained. Photoreflectance (PR) spectroscopy on the lattice-matched ZnCdTeO layer revealed two distinct PR features in the energy regions at 2.2-2.5 eV and 1.5-1.8 eV, which can be attributed to transitions from the valence band to the two conduction subbands, E+ and E-, respectively. © 2013 Elsevier B.V. All rights reserved.
Original languageEnglish
Pages (from-to)259-262
JournalJournal of Crystal Growth
Volume378
DOIs
Publication statusPublished - 2013
Externally publishedYes

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

  1. SDG 7 - Affordable and Clean Energy
    SDG 7 Affordable and Clean Energy

Research Keywords

  • Highly mismatched alloy
  • Intermediate band solar cells
  • Molecular beam epitaxy
  • Semiconducting II-VI materials

Fingerprint

Dive into the research topics of 'Molecular beam epitaxial growth of ZnCdTeO epilayers for intermediate band solar cells'. Together they form a unique fingerprint.

Cite this