Molecular beam epitaxial growth and optical properties of highly mismatched ZnTe 1-xO x alloys

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • Tooru Tanaka
  • Shuhei Kusaba
  • Tomohiro Mochinaga
  • Katsuhiko Saito
  • Qixin Guo
  • Mitsuhiro Nishio
  • Wladek Walukiewicz

Detail(s)

Original languageEnglish
Article number11905
Journal / PublicationApplied Physics Letters
Volume100
Issue number1
Publication statusPublished - 2 Jan 2012
Externally publishedYes

Abstract

Highly mismatched ZnTe 1-xO x(ZnTeO) alloys have been grown by molecular beam epitaxy. X-ray diffraction (XRD) analyses showed that a single-phase ZnTeO layer were grown with a substitutional O composition x up to 1.34% on ZnTe(001) substrate in this experiments. Optical transitions associated with the lower (E -) and upper (E +) conduction subbands resulting from the anticrossing interaction between the localized O states and the extended conduction states of ZnTe were clearly observed, and the dependence of the energy position of these bands on the O composition was consistent with the band anticrossing model. © 2012 American Institute of Physics.

Citation Format(s)

Molecular beam epitaxial growth and optical properties of highly mismatched ZnTe 1-xO x alloys. / Tanaka, Tooru; Kusaba, Shuhei; Mochinaga, Tomohiro; Saito, Katsuhiko; Guo, Qixin; Nishio, Mitsuhiro; Yu, Kin M.; Walukiewicz, Wladek.

In: Applied Physics Letters, Vol. 100, No. 1, 11905, 02.01.2012.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review