Modulation of resistive switching in Pt/LiCoO2/SiO2/Si stacks

Qi Hu; Anping Huang; Xinjiang Zhang; Runmiao Li; Qin Gao; Meng Wang; Mei Wang; Hongliang Shi; Zhisong Xiao; Paul K. Chu

doi:10.1007/s10854-019-00768-5

Modulation of resistive switching in Pt/LiCoO₂/SiO₂/Si stacks

Qi Hu, Anping Huang^*, Xinjiang Zhang, Runmiao Li, Qin Gao, Meng Wang, Mei Wang, Hongliang Shi, Zhisong Xiao, Paul K. Chu

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

4 Citations (Scopus)

Abstract

Pt/LiCoO₂/SiO₂/Si stacks are fabricated by pulsed laser deposition and annealed at different annealing temperature. Pt/LiCoO₂/SiO₂/Si stacks exhibit lower current and higher high resistance state/low resistance state ratio than other stacks with homogeneous resistive switching. It is found that resistive switching behavior of Pt/LiCoO₂/SiO₂/Si stacks can be modulated by LiCoO₂ crystal structures. The Pt/LiCoO₂/SiO₂/Si stacks with R-3m LiCoO₂ phase show larger maximum currents and better state stability than samples with amorphous LiCoO₂, and samples with amorphous or R-3m LiCoO₂ phase exhibit non-homogeneous or homogeneous resistive switching, respectively. The reasons for the different resistive switching behaviors are investigated and discussed. These findings provide insights into how to improve the performance of Pt/LiCoO₂/SiO₂/Si stacks and a further understanding of the homogeneous resistive switching behavior.

Original language	English
Pages (from-to)	4753-4759
Journal	Journal of Materials Science: Materials in Electronics
Volume	30
Issue number	5
Online published	23 Jan 2019
DOIs	https://doi.org/10.1007/s10854-019-00768-5
Publication status	Published - Mar 2019

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@article{b00f052b33fe4ef5a32718e0ade6b230,

title = "Modulation of resistive switching in Pt/LiCoO2/SiO2/Si stacks",

abstract = "Pt/LiCoO2/SiO2/Si stacks are fabricated by pulsed laser deposition and annealed at different annealing temperature. Pt/LiCoO2/SiO2/Si stacks exhibit lower current and higher high resistance state/low resistance state ratio than other stacks with homogeneous resistive switching. It is found that resistive switching behavior of Pt/LiCoO2/SiO2/Si stacks can be modulated by LiCoO2 crystal structures. The Pt/LiCoO2/SiO2/Si stacks with R-3m LiCoO2 phase show larger maximum currents and better state stability than samples with amorphous LiCoO2, and samples with amorphous or R-3m LiCoO2 phase exhibit non-homogeneous or homogeneous resistive switching, respectively. The reasons for the different resistive switching behaviors are investigated and discussed. These findings provide insights into how to improve the performance of Pt/LiCoO2/SiO2/Si stacks and a further understanding of the homogeneous resistive switching behavior.",

author = "Qi Hu and Anping Huang and Xinjiang Zhang and Runmiao Li and Qin Gao and Meng Wang and Mei Wang and Hongliang Shi and Zhisong Xiao and Chu, {Paul K.}",

year = "2019",

month = mar,

doi = "10.1007/s10854-019-00768-5",

language = "English",

volume = "30",

pages = "4753--4759",

journal = "Journal of Materials Science: Materials in Electronics",

issn = "0957-4522",

publisher = "Springer New York",

number = "5",

}

TY - JOUR

T1 - Modulation of resistive switching in Pt/LiCoO2/SiO2/Si stacks

AU - Hu, Qi

AU - Huang, Anping

AU - Zhang, Xinjiang

AU - Li, Runmiao

AU - Gao, Qin

AU - Wang, Meng

AU - Wang, Mei

AU - Shi, Hongliang

AU - Xiao, Zhisong

AU - Chu, Paul K.

PY - 2019/3

Y1 - 2019/3

N2 - Pt/LiCoO2/SiO2/Si stacks are fabricated by pulsed laser deposition and annealed at different annealing temperature. Pt/LiCoO2/SiO2/Si stacks exhibit lower current and higher high resistance state/low resistance state ratio than other stacks with homogeneous resistive switching. It is found that resistive switching behavior of Pt/LiCoO2/SiO2/Si stacks can be modulated by LiCoO2 crystal structures. The Pt/LiCoO2/SiO2/Si stacks with R-3m LiCoO2 phase show larger maximum currents and better state stability than samples with amorphous LiCoO2, and samples with amorphous or R-3m LiCoO2 phase exhibit non-homogeneous or homogeneous resistive switching, respectively. The reasons for the different resistive switching behaviors are investigated and discussed. These findings provide insights into how to improve the performance of Pt/LiCoO2/SiO2/Si stacks and a further understanding of the homogeneous resistive switching behavior.

AB - Pt/LiCoO2/SiO2/Si stacks are fabricated by pulsed laser deposition and annealed at different annealing temperature. Pt/LiCoO2/SiO2/Si stacks exhibit lower current and higher high resistance state/low resistance state ratio than other stacks with homogeneous resistive switching. It is found that resistive switching behavior of Pt/LiCoO2/SiO2/Si stacks can be modulated by LiCoO2 crystal structures. The Pt/LiCoO2/SiO2/Si stacks with R-3m LiCoO2 phase show larger maximum currents and better state stability than samples with amorphous LiCoO2, and samples with amorphous or R-3m LiCoO2 phase exhibit non-homogeneous or homogeneous resistive switching, respectively. The reasons for the different resistive switching behaviors are investigated and discussed. These findings provide insights into how to improve the performance of Pt/LiCoO2/SiO2/Si stacks and a further understanding of the homogeneous resistive switching behavior.

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U2 - 10.1007/s10854-019-00768-5

DO - 10.1007/s10854-019-00768-5

M3 - RGC 21 - Publication in refereed journal

SN - 0957-4522

VL - 30

SP - 4753

EP - 4759

JO - Journal of Materials Science: Materials in Electronics

JF - Journal of Materials Science: Materials in Electronics

IS - 5

ER -