Modulation of resistive switching in Pt/LiCoO2/SiO2/Si stacks
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
Author(s)
Related Research Unit(s)
Detail(s)
Original language | English |
---|---|
Pages (from-to) | 4753-4759 |
Journal / Publication | Journal of Materials Science: Materials in Electronics |
Volume | 30 |
Issue number | 5 |
Online published | 23 Jan 2019 |
Publication status | Published - Mar 2019 |
Link(s)
Abstract
Pt/LiCoO2/SiO2/Si stacks are fabricated by pulsed laser deposition and annealed at different annealing temperature. Pt/LiCoO2/SiO2/Si stacks exhibit lower current and higher high resistance state/low resistance state ratio than other stacks with homogeneous resistive switching. It is found that resistive switching behavior of Pt/LiCoO2/SiO2/Si stacks can be modulated by LiCoO2 crystal structures. The Pt/LiCoO2/SiO2/Si stacks with R-3m LiCoO2 phase show larger maximum currents and better state stability than samples with amorphous LiCoO2, and samples with amorphous or R-3m LiCoO2 phase exhibit non-homogeneous or homogeneous resistive switching, respectively. The reasons for the different resistive switching behaviors are investigated and discussed. These findings provide insights into how to improve the performance of Pt/LiCoO2/SiO2/Si stacks and a further understanding of the homogeneous resistive switching behavior.
Citation Format(s)
Modulation of resistive switching in Pt/LiCoO2/SiO2/Si stacks. / Hu, Qi; Huang, Anping; Zhang, Xinjiang et al.
In: Journal of Materials Science: Materials in Electronics, Vol. 30, No. 5, 03.2019, p. 4753-4759.
In: Journal of Materials Science: Materials in Electronics, Vol. 30, No. 5, 03.2019, p. 4753-4759.
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review