Modulation of resistive switching in Pt/LiCoO2/SiO2/Si stacks

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

2 Scopus Citations
View graph of relations

Author(s)

  • Qi Hu
  • Anping Huang
  • Xinjiang Zhang
  • Runmiao Li
  • Qin Gao
  • Meng Wang
  • Mei Wang
  • Hongliang Shi
  • Zhisong Xiao

Detail(s)

Original languageEnglish
Pages (from-to)4753-4759
Journal / PublicationJournal of Materials Science: Materials in Electronics
Volume30
Issue number5
Online published23 Jan 2019
Publication statusPublished - Mar 2019

Abstract

Pt/LiCoO2/SiO2/Si stacks are fabricated by pulsed laser deposition and annealed at different annealing temperature. Pt/LiCoO2/SiO2/Si stacks exhibit lower current and higher high resistance state/low resistance state ratio than other stacks with homogeneous resistive switching. It is found that resistive switching behavior of Pt/LiCoO2/SiO2/Si stacks can be modulated by LiCoO2 crystal structures. The Pt/LiCoO2/SiO2/Si stacks with R-3m LiCoO2 phase show larger maximum currents and better state stability than samples with amorphous LiCoO2, and samples with amorphous or R-3m LiCoO2 phase exhibit non-homogeneous or homogeneous resistive switching, respectively. The reasons for the different resistive switching behaviors are investigated and discussed. These findings provide insights into how to improve the performance of Pt/LiCoO2/SiO2/Si stacks and a further understanding of the homogeneous resistive switching behavior.

Citation Format(s)

Modulation of resistive switching in Pt/LiCoO2/SiO2/Si stacks. / Hu, Qi; Huang, Anping; Zhang, Xinjiang; Li, Runmiao; Gao, Qin; Wang, Meng; Wang, Mei; Shi, Hongliang; Xiao, Zhisong; Chu, Paul K.

In: Journal of Materials Science: Materials in Electronics, Vol. 30, No. 5, 03.2019, p. 4753-4759.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review