Modulation of photoemission spectra of In2O3 nanowires by the variation in Zn doping level

C. L. Hsin; J. H. He; L. J. Chen

doi:10.1063/1.2172219

Modulation of photoemission spectra of In₂O₃ nanowires by the variation in Zn doping level

C. L. Hsin
, J. H. He
, L. J. Chen^*

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

43 Citations (Scopus)

Abstract

The growth of In₂O₃ nanowires on Si substrate with different zinc doping levels has been achieved by a vapor transport and condensation method. The atomic percentage in doping level is approximately proportional to the weight of ZnO powder added in the source. The ultraviolet (UV) and green light photoemissions of the In₂O₃ nanowires are depressed and enhanced, respectively, with the doping level of Zn impurity. The UV and green light peaks are attributed to oxygen vacancy and zinc impurity energy levels. Similar tuning by other impurities can be expected and will be beneficial for possible optoelectronic applications.

Original language	English
Article number	063111
Journal	Applied Physics Letters
Volume	88
Issue number	6
DOIs	https://doi.org/10.1063/1.2172219
Publication status	Published - 6 Feb 2006
Externally published	Yes

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title = "Modulation of photoemission spectra of In2O3 nanowires by the variation in Zn doping level",

abstract = "The growth of In2O3 nanowires on Si substrate with different zinc doping levels has been achieved by a vapor transport and condensation method. The atomic percentage in doping level is approximately proportional to the weight of ZnO powder added in the source. The ultraviolet (UV) and green light photoemissions of the In2O3 nanowires are depressed and enhanced, respectively, with the doping level of Zn impurity. The UV and green light peaks are attributed to oxygen vacancy and zinc impurity energy levels. Similar tuning by other impurities can be expected and will be beneficial for possible optoelectronic applications.",

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AU - Hsin, C. L.

AU - He, J. H.

AU - Chen, L. J.

PY - 2006/2/6

Y1 - 2006/2/6

N2 - The growth of In2O3 nanowires on Si substrate with different zinc doping levels has been achieved by a vapor transport and condensation method. The atomic percentage in doping level is approximately proportional to the weight of ZnO powder added in the source. The ultraviolet (UV) and green light photoemissions of the In2O3 nanowires are depressed and enhanced, respectively, with the doping level of Zn impurity. The UV and green light peaks are attributed to oxygen vacancy and zinc impurity energy levels. Similar tuning by other impurities can be expected and will be beneficial for possible optoelectronic applications.

AB - The growth of In2O3 nanowires on Si substrate with different zinc doping levels has been achieved by a vapor transport and condensation method. The atomic percentage in doping level is approximately proportional to the weight of ZnO powder added in the source. The ultraviolet (UV) and green light photoemissions of the In2O3 nanowires are depressed and enhanced, respectively, with the doping level of Zn impurity. The UV and green light peaks are attributed to oxygen vacancy and zinc impurity energy levels. Similar tuning by other impurities can be expected and will be beneficial for possible optoelectronic applications.

UR - https://www.scopus.com/pages/publications/32444440591

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-32444440591&origin=recordpage

U2 - 10.1063/1.2172219

DO - 10.1063/1.2172219

M3 - RGC 21 - Publication in refereed journal

SN - 0003-6951

VL - 88

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

M1 - 063111

ER -