Modulating electronic transport properties of MoS2 field effect transistor by surface overlayers

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal

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Author(s)

  • Jiadan Lin
  • Jianqiang Zhong
  • Shu Zhong
  • Hai Li
  • Wei Chen

Detail(s)

Original languageEnglish
Article number063109
Journal / PublicationApplied Physics Letters
Volume103
Issue number6
Online publishedAug 2013
Publication statusPublished - 5 Aug 2013
Externally publishedYes

Abstract

In situ bottom-gated molybdenum disulfide (MoS2) field effect transistors (FETs) device characterization and in situ ultraviolet photoelectron spectroscopy and x-ray photoelectron spectroscopy measurements were combined to investigate the effect of surface modification layers of C60 and molybdenum trioxide (MoO3) on the electronic properties of single layer MoS2. It is found that C60 decoration keeps MoS2 FET performance intact due to the very weak interfacial interactions, making C60 as an ideal capping layer for MoS2 devices. In contrast, decorating MoO3 on MoS2 induces significant charge transfer at the MoS2/MoO3 interface and largely depletes the electron charge carriers in MoS2 FET devices.

Citation Format(s)

Modulating electronic transport properties of MoS2 field effect transistor by surface overlayers. / Lin, Jiadan; Zhong, Jianqiang; Zhong, Shu; Li, Hai; Zhang, Hua; Chen, Wei.

In: Applied Physics Letters, Vol. 103, No. 6, 063109, 05.08.2013.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal