Modifying bandgap of tio2-based nanoparticles by cation doping

Research output: Chapters, Conference Papers, Creative and Literary WorksRGC 32 - Refereed conference paper (with host publication)peer-review

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Author(s)

Detail(s)

Original languageEnglish
Title of host publicationAIChE Annual Meeting, Conference Proceedings
Publication statusPublished - 2005
Externally publishedYes

Conference

Title2005 AIChE Annual Meeting and Fall Showcase (05 AIChE)
PlaceUnited States
CityCincinnati, OH
Period30 October - 4 November 2005

Abstract

Doping of foreign elements is a common practice in modifying the bandgap of semiconductors. This is especially important in photocatalysis where undoped TiO2 can only be activated by light energy equal to or greater than 3.2 eV i.e. ultraviolet. Such energy range is unfortunately present in less than 3% of the solar spectrum. In this work, attempts to synthesise cation-doped (Fe, V, Mn and Co) TiO2 with bandgap energy less than 3.2 eV is demonstrated via a one-step Flame Spray Pyrolysis technique. Doping cations into TiO2 lattice creates impurity energy level in the original bandgap hence allowing for photoresponse at lower energy or by visible light. The amount of each dopant was varied between 0.5 to 30 atom% and its effects on the bandgap energy and other physicochemical properties were investigated.

Citation Format(s)

Modifying bandgap of tio2-based nanoparticles by cation doping. / Teoh, Wey Yang; Maedler, Lutz; Amal, Rose et al.
AIChE Annual Meeting, Conference Proceedings. 2005.

Research output: Chapters, Conference Papers, Creative and Literary WorksRGC 32 - Refereed conference paper (with host publication)peer-review