Modification of the hole injection barrier in organic light-emitting devices studied by ultraviolet photoelectron spectroscopy

X. M. Ding; L. M. Hung; L. F. Cheng; Z. B. Deng; X. Y. Hou; C. S. Lee; S. T. Lee

doi:10.1063/1.126449

Modification of the hole injection barrier in organic light-emitting devices studied by ultraviolet photoelectron spectroscopy

X. M. Ding
, L. M. Hung
, L. F. Cheng
, Z. B. Deng
, X. Y. Hou
, C. S. Lee
, S. T. Lee

Centre of Super-Diamond and Advanced Films

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

110 Citations (Scopus)

Abstract

Ultraviolet photoelectron spectroscopy has been applied to the investigation of modified hole injection barriers in organic light-emitting devices (OLEDs). Different from those reported previously, the indium tin oxide (ITO) surface treated in situ by oxygen plasma possesses a work function of 5.2 eV, and the organic ITO interface thereafter formed shows a 0.5 eV smaller hole injection barrier compared to that on untreated ITO. Insertion of an ultrathin SiO₂ layer between the organic and ITO results in a similar reduction of the barrier. This indicates that improved hole injection favors efficient operation of OLEDs, as manifested by enhanced efficiency by the SiO₂ insertion. © 2000 American Institute of Physics.

Original language	English
Pages (from-to)	2704-2706
Journal	Applied Physics Letters
Volume	76
Issue number	19
DOIs	https://doi.org/10.1063/1.126449
Publication status	Published - 8 May 2000

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@article{35f5b69fa4bc43189770ccc7e8a48b6e,

title = "Modification of the hole injection barrier in organic light-emitting devices studied by ultraviolet photoelectron spectroscopy",

abstract = "Ultraviolet photoelectron spectroscopy has been applied to the investigation of modified hole injection barriers in organic light-emitting devices (OLEDs). Different from those reported previously, the indium tin oxide (ITO) surface treated in situ by oxygen plasma possesses a work function of 5.2 eV, and the organic ITO interface thereafter formed shows a 0.5 eV smaller hole injection barrier compared to that on untreated ITO. Insertion of an ultrathin SiO2 layer between the organic and ITO results in a similar reduction of the barrier. This indicates that improved hole injection favors efficient operation of OLEDs, as manifested by enhanced efficiency by the SiO2 insertion. {\textcopyright} 2000 American Institute of Physics.",

author = "Ding, \{X. M.\} and Hung, \{L. M.\} and Cheng, \{L. F.\} and Deng, \{Z. B.\} and Hou, \{X. Y.\} and Lee, \{C. S.\} and Lee, \{S. T.\}",

year = "2000",

month = may,

day = "8",

doi = "10.1063/1.126449",

language = "English",

volume = "76",

pages = "2704--2706",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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TY - JOUR

T1 - Modification of the hole injection barrier in organic light-emitting devices studied by ultraviolet photoelectron spectroscopy

AU - Ding, X. M.

AU - Hung, L. M.

AU - Cheng, L. F.

AU - Deng, Z. B.

AU - Hou, X. Y.

AU - Lee, C. S.

AU - Lee, S. T.

PY - 2000/5/8

Y1 - 2000/5/8

N2 - Ultraviolet photoelectron spectroscopy has been applied to the investigation of modified hole injection barriers in organic light-emitting devices (OLEDs). Different from those reported previously, the indium tin oxide (ITO) surface treated in situ by oxygen plasma possesses a work function of 5.2 eV, and the organic ITO interface thereafter formed shows a 0.5 eV smaller hole injection barrier compared to that on untreated ITO. Insertion of an ultrathin SiO2 layer between the organic and ITO results in a similar reduction of the barrier. This indicates that improved hole injection favors efficient operation of OLEDs, as manifested by enhanced efficiency by the SiO2 insertion. © 2000 American Institute of Physics.

AB - Ultraviolet photoelectron spectroscopy has been applied to the investigation of modified hole injection barriers in organic light-emitting devices (OLEDs). Different from those reported previously, the indium tin oxide (ITO) surface treated in situ by oxygen plasma possesses a work function of 5.2 eV, and the organic ITO interface thereafter formed shows a 0.5 eV smaller hole injection barrier compared to that on untreated ITO. Insertion of an ultrathin SiO2 layer between the organic and ITO results in a similar reduction of the barrier. This indicates that improved hole injection favors efficient operation of OLEDs, as manifested by enhanced efficiency by the SiO2 insertion. © 2000 American Institute of Physics.

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U2 - 10.1063/1.126449

DO - 10.1063/1.126449

M3 - RGC 21 - Publication in refereed journal

SN - 0003-6951

VL - 76

SP - 2704

EP - 2706

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

ER -

Modification of the hole injection barrier in organic light-emitting devices studied by ultraviolet photoelectron spectroscopy

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