Modelling of trap-assisted electronic conduction in thin thermally nitrided oxide films

B. L. Yang; H. Wong; Y. C. Cheng

doi:10.1016/0038-1101(95)00134-4

Modelling of trap-assisted electronic conduction in thin thermally nitrided oxide films

B. L. Yang
, H. Wong
, Y. C. Cheng

Department of Electrical Engineering

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

15 Citations (Scopus)

Abstract

The current-voltage characteristics of thin thermally nitrided oxide films have been investigated in detail at temperatures ranging from 100 to 298 K. Considering the fact that shallow traps do not capture any electrons but contribute to the current conduction, a trap-assisted conduction model for dielectric films is developed. The theoretical results are in good agreement with the experimental data. For electric fields in the range of 6-8 MV cm^-1, we found that at room temperature the transport current in the nitrided oxide is governed mainly by shallow trap-assisted tunnelling, and by deep trap-assisted tunnelling at low temperatures (

Original language	English
Pages (from-to)	385-390
Journal	Solid-State Electronics
Volume	39
Issue number	3
DOIs	https://doi.org/10.1016/0038-1101(95)00134-4
Publication status	Published - Mar 1996

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title = "Modelling of trap-assisted electronic conduction in thin thermally nitrided oxide films",

abstract = "The current-voltage characteristics of thin thermally nitrided oxide films have been investigated in detail at temperatures ranging from 100 to 298 K. Considering the fact that shallow traps do not capture any electrons but contribute to the current conduction, a trap-assisted conduction model for dielectric films is developed. The theoretical results are in good agreement with the experimental data. For electric fields in the range of 6-8 MV cm-1, we found that at room temperature the transport current in the nitrided oxide is governed mainly by shallow trap-assisted tunnelling, and by deep trap-assisted tunnelling at low temperatures (",

author = "Yang, \{B. L.\} and H. Wong and Cheng, \{Y. C.\}",

year = "1996",

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doi = "10.1016/0038-1101(95)00134-4",

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T1 - Modelling of trap-assisted electronic conduction in thin thermally nitrided oxide films

AU - Yang, B. L.

AU - Wong, H.

AU - Cheng, Y. C.

PY - 1996/3

Y1 - 1996/3

N2 - The current-voltage characteristics of thin thermally nitrided oxide films have been investigated in detail at temperatures ranging from 100 to 298 K. Considering the fact that shallow traps do not capture any electrons but contribute to the current conduction, a trap-assisted conduction model for dielectric films is developed. The theoretical results are in good agreement with the experimental data. For electric fields in the range of 6-8 MV cm-1, we found that at room temperature the transport current in the nitrided oxide is governed mainly by shallow trap-assisted tunnelling, and by deep trap-assisted tunnelling at low temperatures (

AB - The current-voltage characteristics of thin thermally nitrided oxide films have been investigated in detail at temperatures ranging from 100 to 298 K. Considering the fact that shallow traps do not capture any electrons but contribute to the current conduction, a trap-assisted conduction model for dielectric films is developed. The theoretical results are in good agreement with the experimental data. For electric fields in the range of 6-8 MV cm-1, we found that at room temperature the transport current in the nitrided oxide is governed mainly by shallow trap-assisted tunnelling, and by deep trap-assisted tunnelling at low temperatures (

UR - https://www.scopus.com/pages/publications/0030101890

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0030101890&origin=recordpage

U2 - 10.1016/0038-1101(95)00134-4

DO - 10.1016/0038-1101(95)00134-4

M3 - RGC 21 - Publication in refereed journal

SN - 0038-1101

VL - 39

SP - 385

EP - 390

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 3

ER -

Modelling of trap-assisted electronic conduction in thin thermally nitrided oxide films

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