Modeling the stress evolution of ion beam synthesized nanocrystals

D. O. Yi; I. D. Sharp; Q. Xu; C. Y. Liao; J. W. Ager III; J. W. Beeman; Z. Liliental-Weber; K. M. Yu; D. Zakharov; E. E. Haller; D. C. Chrzan

doi:10.1557/proc-821-p8.16

Modeling the stress evolution of ion beam synthesized nanocrystals

D. O. Yi
, I. D. Sharp
, Q. Xu
, C. Y. Liao
, J. W. Ager III
, J. W. Beeman
, Z. Liliental-Weber
, K. M. Yu
, D. Zakharov
, E. E. Haller
, D. C. Chrzan

Research output: Journal Publications and Reviews › RGC 22 - Publication in policy or professional journal

2 Citations (Scopus)

Abstract

Under certain conditions, nucleation and growth can lead to substantial stresses in nanocrystals embedded in a host matrix. These stresses may be relaxed through subsequent annealing treatments. A model is presented for the relaxation of these stresses via diffusive processes within the matrix. The model reflects the effects of surface tension, potential phase transformations at or near the processing temperature, and differential thermal expansion. It is demonstrated that the model describes well the stress relaxation of ion beam synthesized Ge nanocrystals embedded in a silica matrix. © 2004 Materials Research Society.

Original language	English
Article number	P8.16
Pages (from-to)	31-36
Journal	Materials Research Society Symposium Proceedings
Volume	821
DOIs	https://doi.org/10.1557/proc-821-p8.16
Publication status	Published - 2004
Externally published	Yes
Event	Nanoscale Materials and Modeling - Relations Among Processing, Microstructure and Mechanical Properties - San Francisco, CA, United States Duration: 13 Apr 2004 → 16 Apr 2004

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title = "Modeling the stress evolution of ion beam synthesized nanocrystals",

abstract = "Under certain conditions, nucleation and growth can lead to substantial stresses in nanocrystals embedded in a host matrix. These stresses may be relaxed through subsequent annealing treatments. A model is presented for the relaxation of these stresses via diffusive processes within the matrix. The model reflects the effects of surface tension, potential phase transformations at or near the processing temperature, and differential thermal expansion. It is demonstrated that the model describes well the stress relaxation of ion beam synthesized Ge nanocrystals embedded in a silica matrix. {\textcopyright} 2004 Materials Research Society.",

author = "Yi, \{D. O.\} and Sharp, \{I. D.\} and Q. Xu and Liao, \{C. Y.\} and \{Ager III\}, \{J. W.\} and Beeman, \{J. W.\} and Z. Liliental-Weber and Yu, \{K. M.\} and D. Zakharov and Haller, \{E. E.\} and Chrzan, \{D. C.\}",

year = "2004",

doi = "10.1557/proc-821-p8.16",

language = "English",

volume = "821",

pages = "31--36",

journal = "Materials Research Society Symposium Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Nanoscale Materials and Modeling - Relations Among Processing, Microstructure and Mechanical Properties ; Conference date: 13-04-2004 Through 16-04-2004",

}

TY - JOUR

T1 - Modeling the stress evolution of ion beam synthesized nanocrystals

AU - Yi, D. O.

AU - Sharp, I. D.

AU - Xu, Q.

AU - Liao, C. Y.

AU - Ager III, J. W.

AU - Beeman, J. W.

AU - Liliental-Weber, Z.

AU - Yu, K. M.

AU - Zakharov, D.

AU - Haller, E. E.

AU - Chrzan, D. C.

PY - 2004

Y1 - 2004

N2 - Under certain conditions, nucleation and growth can lead to substantial stresses in nanocrystals embedded in a host matrix. These stresses may be relaxed through subsequent annealing treatments. A model is presented for the relaxation of these stresses via diffusive processes within the matrix. The model reflects the effects of surface tension, potential phase transformations at or near the processing temperature, and differential thermal expansion. It is demonstrated that the model describes well the stress relaxation of ion beam synthesized Ge nanocrystals embedded in a silica matrix. © 2004 Materials Research Society.

AB - Under certain conditions, nucleation and growth can lead to substantial stresses in nanocrystals embedded in a host matrix. These stresses may be relaxed through subsequent annealing treatments. A model is presented for the relaxation of these stresses via diffusive processes within the matrix. The model reflects the effects of surface tension, potential phase transformations at or near the processing temperature, and differential thermal expansion. It is demonstrated that the model describes well the stress relaxation of ion beam synthesized Ge nanocrystals embedded in a silica matrix. © 2004 Materials Research Society.

UR - https://www.scopus.com/pages/publications/20144362564

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-20144362564&origin=recordpage

U2 - 10.1557/proc-821-p8.16

DO - 10.1557/proc-821-p8.16

M3 - RGC 22 - Publication in policy or professional journal

SN - 0272-9172

VL - 821

SP - 31

EP - 36

JO - Materials Research Society Symposium Proceedings

JF - Materials Research Society Symposium Proceedings

M1 - P8.16

T2 - Nanoscale Materials and Modeling - Relations Among Processing, Microstructure and Mechanical Properties

Y2 - 13 April 2004 through 16 April 2004

ER -

Modeling the stress evolution of ion beam synthesized nanocrystals

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