Modeling of the relationship between implantation parameters and implantation dose during plasma immersion ion implantation

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Original languageEnglish
Pages (from-to)42-46
Journal / PublicationPhysics Letters, Section A: General, Atomic and Solid State Physics
Issue number1
Publication statusPublished - 13 Nov 2000


Plasma immersion ion implantation (PIII) has attracted wide interests since it emulates conventional ion-beam ion implantation (IBII) in niche applications. For instance, the technique has very high throughput, the implantation time is independent of the sample size, and samples with an irregular shape can be implanted without complex beam scanning or sample manipulation. However, unlike conventional ion-beam ion implantation (IBII), prediction of the implantation dose and consequent process optimization are very difficult without extensive experiments since the incident ion flux is related to the implantation parameters such as accelerating voltage, pulse duration, and so on in a complex manner. Even though individual parameters have been investigated, there has not been a unified and user-friendly model to numerically predict the implantation dose under different plasma and processing conditions. In this letter, we present a one-dimensional analytical model to simulate the effects of parameter variations on the incident ion dose and to predict the implantation dose. The cerived model is quite simple and applicable to planar targets such as silicon wafers. It will be an invaluable tool to process engineers in microelectronics working on silicon-on-insulator (SOI) formation by PIII and plasma doping. (C) 2000 Elsevier Science B.V.

Research Area(s)

  • Implantation dose, Modeling, Plasma immersion ion implantation, Silicon processing

Citation Format(s)