Modeling of optical gain properties of multiple cations InGaAs-InAlAs quantum-well intermixing

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

5 Scopus Citations
View graph of relations

Author(s)

  • Michael C.Y. Chan
  • Y. Chan
  • E. Herbert Li

Detail(s)

Original languageEnglish
Pages (from-to)519-525
Journal / PublicationIEEE Journal of Quantum Electronics
Volume34
Issue number3
Publication statusPublished - Mar 1998
Externally publishedYes

Abstract

Multiple cations intermixing in an In0.53Ga0.47As-In0.52Al0.48As quantum-well (QW) structure with 60-Å well width is being studied based on the expanded form of Fick's second law. Interdiffusion of the indium sublattice can result in a maximum compressive strain of 0.64% when annealing time reaches 3 h at 812 °C. For a small interdiffuison, i.e., 1-1.5 h, the subband separation between the lowest heavy and light hole states is at its greatest. This has a major contribution to the modified band structure and averaged density of states which can result in an enhanced optical gain up to 40%. This initial stage of intermixing provides the best lasing performance. For large interdiffusion, i.e., up to 6 h, a large blue shift of the peak gain from 0.842 eV (λ = 1.47 μm) to 1.016 eV (λ = 1.22 μm) is obtained, thus giving a high tunability of the lasing wavelength.

Research Area(s)

  • Diffusion process, InAlGaAs, Optical gain, Quantum-well interdiffusion, Quantum-well intermixing, Quantum-well lasers, Tunable devices