Modeling of OES data to estimate etch rate for etching equipment
Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
Author(s)
Detail(s)
| Original language | English |
|---|---|
| Pages (from-to) | 108-118 |
| Journal / Publication | Proceedings of SPIE - The International Society for Optical Engineering |
| Volume | 3213 |
| Online published | 25 Aug 1997 |
| Publication status | Published - Oct 1997 |
| Externally published | Yes |
Conference
| Title | Process, Equipment, and Materials Control in Integrated Circuit Manufacturing III |
|---|---|
| Place | United States |
| City | Austin |
| Period | 1 - 2 October 1997 |
Link(s)
Abstract
Optical emission spectroscopy (OES) data for 495 wavelengths and wafer measurements (pre- and postoxide film thichness) from a commercial etch tool were collected for 18 oxide wafers to explore the feasibility of using OES as an in-situ sensor to estimate average oxide etch rate. A variable selection method is proposed based on the principle of partial least square (PLS) regression, which select several most informative wavelengths to build ordinary least square (OLS) regression models. Compared with the PLS models, it is found that OLS regression models based on selected wavelengths are more robust.
Research Area(s)
- Etch rate, Optical emission spectroscopy, Regression model
Citation Format(s)
Modeling of OES data to estimate etch rate for etching equipment. / Cheng, Yi; Markle, Richard J.; Qin, Joe; Edgar, Thomas F.; Gatto, Michael J.; Nauert, Chris.
In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 3213, 10.1997, p. 108-118.Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
