Modeling of OES data to estimate etch rate for etching equipment

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • Yi Cheng
  • Richard J. Markle
  • Thomas F. Edgar
  • Michael J. Gatto
  • Chris Nauert

Detail(s)

Original languageEnglish
Pages (from-to)108-118
Journal / PublicationProceedings of SPIE - The International Society for Optical Engineering
Volume3213
Online published25 Aug 1997
Publication statusPublished - Oct 1997
Externally publishedYes

Conference

TitleProcess, Equipment, and Materials Control in Integrated Circuit Manufacturing III
PlaceUnited States
CityAustin
Period1 - 2 October 1997

Abstract

Optical emission spectroscopy (OES) data for 495 wavelengths and wafer measurements (pre- and postoxide film thichness) from a commercial etch tool were collected for 18 oxide wafers to explore the feasibility of using OES as an in-situ sensor to estimate average oxide etch rate. A variable selection method is proposed based on the principle of partial least square (PLS) regression, which select several most informative wavelengths to build ordinary least square (OLS) regression models. Compared with the PLS models, it is found that OLS regression models based on selected wavelengths are more robust.

Research Area(s)

  • Etch rate, Optical emission spectroscopy, Regression model

Citation Format(s)

Modeling of OES data to estimate etch rate for etching equipment. / Cheng, Yi; Markle, Richard J.; Qin, Joe; Edgar, Thomas F.; Gatto, Michael J.; Nauert, Chris.

In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 3213, 10.1997, p. 108-118.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review