Modeling of Low-Frequency Noise in Metal-Oxide-Semiconductor Field-Effect Transistor with Electron Trapping-Detrapping at Oxide-Silicon Interface

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Original languageEnglish
Pages (from-to)1883-1888
Journal / PublicationIEEE Transactions on Electron Devices
Volume38
Issue number8
Publication statusPublished - Aug 1991

Abstract

A low-frequency (flicker) noise model based on the recent progress in the physics of trapping and detrapping of electrons at the silicon-oxide interface for the metal-oxide-semiconductor (MOS) transistors in the linear region is presented. Using the experimental results that the trapping and detrapping time constants are different for same gate bias and temperature, both (vg-vt)/coxand Cox -2dependencies were obtained in the newly proposed model without introducing the mobility fluctuation term. Additionally, gate and temperature dependencies of the frequency index were also incorporated into the model. Results show that the proposed model yields a better correlation to the experiments than others, but there are still several experimental observations unexplained. Suggestions for further refinement of the model are also given. © 1991 IEEE