Modeling of Low-Frequency Noise in Metal-Oxide-Semiconductor Field-Effect Transistor with Electron Trapping-Detrapping at Oxide-Silicon Interface

A low-frequency (flicker) noise model based on the recent progress in the physics of trapping and detrapping of electrons at the silicon-oxide interface for the metal-oxide-semiconductor (MOS) transistors in the linear region is presented. Using the experimental results that the trapping and detrapping time constants are different for same gate bias and temperature, both (vg-vt)/coxand C_ox ^-2dependencies were obtained in the newly proposed model without introducing the mobility fluctuation term. Additionally, gate and temperature dependencies of the frequency index were also incorporated into the model. Results show that the proposed model yields a better correlation to the experiments than others, but there are still several experimental observations unexplained. Suggestions for further refinement of the model are also given. © 1991 IEEE