Modeling of field dependent resistivity of BaTiO3 positive temperature coefficient resistors

H. Wong; P. G. Han; M. C. Poon; Y. Y. Chen; X. R. Zheng

doi:10.1109/HKEDM.1998.740185

Modeling of field dependent resistivity of BaTiO₃ positive temperature coefficient resistors

H. Wong, P. G. Han, M. C. Poon, Y. Y. Chen, X. R. Zheng

Department of Electrical Engineering

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

Abstract

An abnormal field dependence of resistivity is observed in BaTiO₃ positive temperature coefficient resistors (PTCRs) with a small averaged grain size. With this connection, a grain boundary tunneling model for the current conduction is proposed. This new model agrees with the both the measured electric field and temperature dependencies. It suggests that grain boundary tunneling of carrier is as important as the double Schottky barrier in the current conduction in small grain size BaTiO₃ PTCRs.

Original language	English
Title of host publication	Proceedings 1998 IEEE Hong Kong Electron Devices Meeting
Publisher	IEEE
Pages	45-48
ISBN (Print)	0-7803-4932-6
DOIs	https://doi.org/10.1109/HKEDM.1998.740185
Publication status	Published - Aug 1998
Event	5th IEEE Hong Kong Electron Devices Meeting, HKEDM 1998 - Hong Kong, Hong Kong, China Duration: 29 Aug 1998 → 29 Aug 1998

Publication series

Name	Proceedings - IEEE Hong Kong Electron Devices Meeting, HKEDM
Volume	1998-August

Conference

Conference	5th IEEE Hong Kong Electron Devices Meeting, HKEDM 1998
Place	Hong Kong, China
City	Hong Kong
Period	29/08/98 → 29/08/98

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10.1109/HKEDM.1998.740185

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Wong, H., Han, P. G., Poon, M. C., Chen, Y. Y., & Zheng, X. R. (1998). Modeling of field dependent resistivity of BaTiO₃ positive temperature coefficient resistors. In Proceedings 1998 IEEE Hong Kong Electron Devices Meeting (pp. 45-48). Article 740185 (Proceedings - IEEE Hong Kong Electron Devices Meeting, HKEDM ; Vol. 1998-August). IEEE. https://doi.org/10.1109/HKEDM.1998.740185

@inproceedings{deff40ab30cd4edc86e076dc6034f306,

title = "Modeling of field dependent resistivity of BaTiO3 positive temperature coefficient resistors",

abstract = "An abnormal field dependence of resistivity is observed in BaTiO3 positive temperature coefficient resistors (PTCRs) with a small averaged grain size. With this connection, a grain boundary tunneling model for the current conduction is proposed. This new model agrees with the both the measured electric field and temperature dependencies. It suggests that grain boundary tunneling of carrier is as important as the double Schottky barrier in the current conduction in small grain size BaTiO3 PTCRs.",

author = "H. Wong and Han, {P. G.} and Poon, {M. C.} and Chen, {Y. Y.} and Zheng, {X. R.}",

year = "1998",

month = aug,

doi = "10.1109/HKEDM.1998.740185",

language = "English",

isbn = "0-7803-4932-6",

series = "Proceedings - IEEE Hong Kong Electron Devices Meeting, HKEDM ",

publisher = "IEEE",

pages = "45--48",

booktitle = "Proceedings 1998 IEEE Hong Kong Electron Devices Meeting",

address = "United States",

note = "5th IEEE Hong Kong Electron Devices Meeting, HKEDM 1998 ; Conference date: 29-08-1998 Through 29-08-1998",

}

Wong, H, Han, PG, Poon, MC, Chen, YY & Zheng, XR 1998, Modeling of field dependent resistivity of BaTiO₃ positive temperature coefficient resistors. in Proceedings 1998 IEEE Hong Kong Electron Devices Meeting., 740185, Proceedings - IEEE Hong Kong Electron Devices Meeting, HKEDM , vol. 1998-August, IEEE, pp. 45-48, 5th IEEE Hong Kong Electron Devices Meeting, HKEDM 1998, Hong Kong, Hong Kong, China, 29/08/98. https://doi.org/10.1109/HKEDM.1998.740185

Modeling of field dependent resistivity of BaTiO₃ positive temperature coefficient resistors. / Wong, H.; Han, P. G.; Poon, M. C. et al.
Proceedings 1998 IEEE Hong Kong Electron Devices Meeting. IEEE, 1998. p. 45-48 740185 (Proceedings - IEEE Hong Kong Electron Devices Meeting, HKEDM ; Vol. 1998-August).

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

TY - GEN

T1 - Modeling of field dependent resistivity of BaTiO3 positive temperature coefficient resistors

AU - Wong, H.

AU - Han, P. G.

AU - Poon, M. C.

AU - Chen, Y. Y.

AU - Zheng, X. R.

PY - 1998/8

Y1 - 1998/8

N2 - An abnormal field dependence of resistivity is observed in BaTiO3 positive temperature coefficient resistors (PTCRs) with a small averaged grain size. With this connection, a grain boundary tunneling model for the current conduction is proposed. This new model agrees with the both the measured electric field and temperature dependencies. It suggests that grain boundary tunneling of carrier is as important as the double Schottky barrier in the current conduction in small grain size BaTiO3 PTCRs.

AB - An abnormal field dependence of resistivity is observed in BaTiO3 positive temperature coefficient resistors (PTCRs) with a small averaged grain size. With this connection, a grain boundary tunneling model for the current conduction is proposed. This new model agrees with the both the measured electric field and temperature dependencies. It suggests that grain boundary tunneling of carrier is as important as the double Schottky barrier in the current conduction in small grain size BaTiO3 PTCRs.

UR - http://www.scopus.com/inward/record.url?scp=85051829892&partnerID=8YFLogxK

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-85051829892&origin=recordpage

U2 - 10.1109/HKEDM.1998.740185

DO - 10.1109/HKEDM.1998.740185

M3 - RGC 32 - Refereed conference paper (with host publication)

SN - 0-7803-4932-6

T3 - Proceedings - IEEE Hong Kong Electron Devices Meeting, HKEDM

SP - 45

EP - 48

BT - Proceedings 1998 IEEE Hong Kong Electron Devices Meeting

PB - IEEE

T2 - 5th IEEE Hong Kong Electron Devices Meeting, HKEDM 1998

Y2 - 29 August 1998 through 29 August 1998

ER -