Abstract
In this paper, we introduce the concept of reliability defect, present the time-dependent defect growth model during operations based on a defect-related gate oxide breakdown mechanism, and build the yield-reliability relation model. Discussions presented here can also be applicable to other device failures when different physics-of-failure mechanisms are found. Through the relation model, it is possible to find a minimum level of latent defect screening to assure the required level of reliability and predict reliability for new products when it is combined with a yield prediction model.
| Original language | English |
|---|---|
| Pages (from-to) | 485-492 |
| Journal | IEEE Transactions on Semiconductor Manufacturing |
| Volume | 12 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 1999 |
| Externally published | Yes |
UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
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SDG 9 Industry, Innovation, and Infrastructure
Policy Impact
- Cited in Policy Documents
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