Modeling manufacturing yield and reliability
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
Author(s)
Detail(s)
Original language | English |
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Pages (from-to) | 485-492 |
Journal / Publication | IEEE Transactions on Semiconductor Manufacturing |
Volume | 12 |
Issue number | 4 |
Publication status | Published - 1999 |
Externally published | Yes |
Link(s)
Abstract
In this paper, we introduce the concept of reliability defect, present the time-dependent defect growth model during operations based on a defect-related gate oxide breakdown mechanism, and build the yield-reliability relation model. Discussions presented here can also be applicable to other device failures when different physics-of-failure mechanisms are found. Through the relation model, it is possible to find a minimum level of latent defect screening to assure the required level of reliability and predict reliability for new products when it is combined with a yield prediction model.
Citation Format(s)
Modeling manufacturing yield and reliability. / Kim, Taeho; Kuo, Way.
In: IEEE Transactions on Semiconductor Manufacturing, Vol. 12, No. 4, 1999, p. 485-492.
In: IEEE Transactions on Semiconductor Manufacturing, Vol. 12, No. 4, 1999, p. 485-492.
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review