Modeling manufacturing yield and reliability
Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
|Journal / Publication||IEEE Transactions on Semiconductor Manufacturing|
|Publication status||Published - 1999|
|Link to Scopus||https://www.scopus.com/record/display.uri?eid=2-s2.0-0033342388&origin=recordpage|
In this paper, we introduce the concept of reliability defect, present the time-dependent defect growth model during operations based on a defect-related gate oxide breakdown mechanism, and build the yield-reliability relation model. Discussions presented here can also be applicable to other device failures when different physics-of-failure mechanisms are found. Through the relation model, it is possible to find a minimum level of latent defect screening to assure the required level of reliability and predict reliability for new products when it is combined with a yield prediction model.