Model-based clustering for integrated circuit yield enhancement

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

Detail(s)

Original languageEnglish
Pages (from-to)143-153
Journal / PublicationEuropean Journal of Operational Research
Volume178
Issue number1
Publication statusPublished - 1 Apr 2007
Externally publishedYes

Abstract

This paper studies the defect data analysis method for semiconductor yield enhancement. Given the defect locations on a wafer, the local defects generated from the assignable causes are classified from the global defects generated from the random causes by model-based clustering, and the clustering methods can identify the characteristics of local defect clusters. The information obtained from this method can facilitate process control, particularly, root-cause analysis. The global defects are modeled by the spatial non-homogeneous Poisson process, and the local defects are modeled by the bivariate normal distribution or by the principal curve. © 2006 Elsevier B.V. All rights reserved.

Research Area(s)

  • Quality control, Stochastic processes