Model of coherent electron field emission from semiconductors through nanometer-wide dielectric coverings

V. Filip; D. Nicolaescu; H. Wong; P. L. Chu

doi:10.1109/SMICND.2004.1402808

Model of coherent electron field emission from semiconductors through nanometer-wide dielectric coverings

V. Filip, D. Nicolaescu, H. Wong, P. L. Chu

Department of Electrical Engineering

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

Abstract

A model of coherent electron field emission from a semiconductor substrate through a very thin (nanometer-wide) dielectric layer is developed. The model includes a separate approach for the electron transmission from the bulk substrate conduction band and from the quasi-bound states induced by the applied field at the substrate-dielectric boundary. No artificial quantization condition is used for the energies of the quasi-bound states. "Resonant" behavior is found in the total emission current density, which may give rise to consistent enhancement as compared to the emission from bare substrate surface, in accordance with other results in the literature. © 2004 IEEE.

Original language	English
Title of host publication	Proceedings - 2004 International Semiconductor Conference
Publisher	IEEE
Pages	77-80
Volume	1
DOIs	https://doi.org/10.1109/SMICND.2004.1402808
Publication status	Published - Oct 2004
Event	27th International Semiconductor Conference (CAS 2004) - Sinaia, Romania Duration: 4 Oct 2004 → 6 Oct 2004

Conference

Conference	27th International Semiconductor Conference (CAS 2004)
Place	Romania
City	Sinaia
Period	4/10/04 → 6/10/04

Research Keywords

Coherent tunneling
Electron field emission
Nanostructures
Ultra-thin dielectric films

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10.1109/SMICND.2004.1402808

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title = "Model of coherent electron field emission from semiconductors through nanometer-wide dielectric coverings",

abstract = "A model of coherent electron field emission from a semiconductor substrate through a very thin (nanometer-wide) dielectric layer is developed. The model includes a separate approach for the electron transmission from the bulk substrate conduction band and from the quasi-bound states induced by the applied field at the substrate-dielectric boundary. No artificial quantization condition is used for the energies of the quasi-bound states. {"}Resonant{"} behavior is found in the total emission current density, which may give rise to consistent enhancement as compared to the emission from bare substrate surface, in accordance with other results in the literature. {\textcopyright} 2004 IEEE.",

keywords = "Coherent tunneling, Electron field emission, Nanostructures, Ultra-thin dielectric films",

author = "V. Filip and D. Nicolaescu and H. Wong and Chu, {P. L.}",

year = "2004",

month = oct,

doi = "10.1109/SMICND.2004.1402808",

language = "English",

volume = "1",

pages = "77--80",

booktitle = "Proceedings - 2004 International Semiconductor Conference",

publisher = "IEEE",

address = "United States",

note = "27th International Semiconductor Conference (CAS 2004) ; Conference date: 04-10-2004 Through 06-10-2004",

}

Model of coherent electron field emission from semiconductors through nanometer-wide dielectric coverings. / Filip, V.; Nicolaescu, D.; Wong, H. et al.
Proceedings - 2004 International Semiconductor Conference. Vol. 1 IEEE, 2004. p. 77-80.

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

TY - GEN

T1 - Model of coherent electron field emission from semiconductors through nanometer-wide dielectric coverings

AU - Filip, V.

AU - Nicolaescu, D.

AU - Wong, H.

AU - Chu, P. L.

PY - 2004/10

Y1 - 2004/10

N2 - A model of coherent electron field emission from a semiconductor substrate through a very thin (nanometer-wide) dielectric layer is developed. The model includes a separate approach for the electron transmission from the bulk substrate conduction band and from the quasi-bound states induced by the applied field at the substrate-dielectric boundary. No artificial quantization condition is used for the energies of the quasi-bound states. "Resonant" behavior is found in the total emission current density, which may give rise to consistent enhancement as compared to the emission from bare substrate surface, in accordance with other results in the literature. © 2004 IEEE.

AB - A model of coherent electron field emission from a semiconductor substrate through a very thin (nanometer-wide) dielectric layer is developed. The model includes a separate approach for the electron transmission from the bulk substrate conduction band and from the quasi-bound states induced by the applied field at the substrate-dielectric boundary. No artificial quantization condition is used for the energies of the quasi-bound states. "Resonant" behavior is found in the total emission current density, which may give rise to consistent enhancement as compared to the emission from bare substrate surface, in accordance with other results in the literature. © 2004 IEEE.

KW - Coherent tunneling

KW - Electron field emission

KW - Nanostructures

KW - Ultra-thin dielectric films

UR - http://www.scopus.com/inward/record.url?scp=27844490983&partnerID=8YFLogxK

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-27844490983&origin=recordpage

U2 - 10.1109/SMICND.2004.1402808

DO - 10.1109/SMICND.2004.1402808

M3 - RGC 32 - Refereed conference paper (with host publication)

VL - 1

SP - 77

EP - 80

BT - Proceedings - 2004 International Semiconductor Conference

PB - IEEE

T2 - 27th International Semiconductor Conference (CAS 2004)

Y2 - 4 October 2004 through 6 October 2004

ER -

Model of coherent electron field emission from semiconductors through nanometer-wide dielectric coverings

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