Mixed-Dimensional Anti-ambipolar Phototransistors Based on 1D GaAsSb/2D MoS2 Heterojunctions

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

3 Scopus Citations
View graph of relations

Detail(s)

Original languageEnglish
Pages (from-to)11036–11048
Journal / PublicationACS Nano
Volume16
Issue number7
Online published27 Jun 2022
Publication statusPublished - 26 Jul 2022

Abstract

The incapability of modulating the photoresponse of assembled heterostructure devices has remained a challenge for the development of optoelectronics with multifunctionality. Here, a gate-tunable and anti-ambipolar phototransistor is reported based on 1D GaAsSb nanowire/2D MoS2 nanoflake mixed-dimensional van der Waals heterojunctions. The resulting heterojunction shows apparently asymmetric control over the anti-ambipolar transfer characteristics, possessing potential to implement electronic functions in logic circuits. Meanwhile, such an anti-ambipolar device allows the synchronous adjustment of band slope and depletion regions by gating in both components, thereby giving rise to the gate-tunability of the photoresponse. Coupled with the synergistic effect of the materials in different dimensionality, the hybrid heterojunction can be readily modulated by the external gate to achieve a high-performance photodetector exhibiting a large on/off current ratio of 4 × 104, fast response of 50 μs, and high detectivity of 1.64 × 1011 Jones. Due to the formation of type-II band alignment and strong interfacial coupling, a prominent photovoltaic response is explored in the heterojunction as well. Finally, a visible image sensor based on this hybrid device is demonstrated with good imaging capability, suggesting the promising application prospect in future optoelectronic systems.

Research Area(s)

  • heterojunction, anti-ambipolar, gate-tunable, phototransistor, image sensor

Citation Format(s)

Mixed-Dimensional Anti-ambipolar Phototransistors Based on 1D GaAsSb/2D MoS2 Heterojunctions. / Wang, Wei; Wang, Weijun; Meng, You; Quan, Quan; Lai, Zhengxun; Li, Dengji; Xie, Pengshan; Yip, SenPo; Kang, Xiaolin; Bu, Xiuming; Chen, Dong; Liu, Chuntai; Ho, Johnny C.

In: ACS Nano, Vol. 16, No. 7, 26.07.2022, p. 11036–11048.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review