Minimizing MLC PCM write energy for free through profiling-based state remapping

Phase change memory is becoming one of the most promising candidates to replace DRAM as main memory in deep sub-micron regime. Multi-level cell (MLC) PCM outperforms single level cell (SLC) PCM in terms of storage capacity but requires an iterative programming-and-verifying scheme to program cells to different resistance levels. The energy consumed in programming different MLC states varies significantly, thus motivating a state remapping technique to minimize the overall write energy. In this paper, we first compare dynamic and static state remapping strategies in terms of their efficacy in reducing energy, and then propose an effective and low-cost static state remapping algorithm. The experimental studies show 10.6% average (up to 16.9%) reduction in MLC PCM write energy, achieved within negligible hardware and performance overhead. Compared with the most related work, the proposed scheme saves more write energy on average, with near-zero performance, area and energy overhead.