Miniaturized Millimeter-Wave On-Chip Bandpass Filter Design in 0.13-μm SiGe BiCMOS Technology

The full potential of active device in current Si-based technology has almost reached its limit. However, the passive devices that are integrated with transistors in the same technology have yet been fully explored. Improving the quality of on-chip passive devices is not only beneficial for energy efficiency, but also has significant meaning in cost reduction for a system-on-chip (SoC) solution while the passive circuits are miniaturized. A review of on-chip circuit miniaturization techniques for bandpass filter (BPF) design is demonstrated in this paper. Although the recently presented broadside-coupled meander line resonator (BCMLR) is very compact, the stopband attenuation is quite limited. To solve this issue, a ring-based structure is studied in this work. Using this approach, the size of the proposed millimeter-wave on-chip BPF can be significantly reduced due to the multi-mode characteristics of the proposed resonators, of which the equivalent circuits can be effectively modeled through the accurately extracted lumped components values. Our works exhibit excellent performance comparing with the state-of-the-art designs.