Microwave synthesis and enhancement of power factors of HfxTi1−xNiSn

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalNot applicablepeer-review

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Author(s)

  • Yu Li
  • Rui Zheng
  • Ying Lei
  • Wen Chen
  • Rundong Wan
  • Hongwei Zhou

Detail(s)

Original languageEnglish
Pages (from-to)13-17
Journal / PublicationMaterials Letters
Volume251
Early online date29 Apr 2019
Publication statusPublished - 15 Sep 2019

Abstract

A series of Hf-doped HfxTi1−xNiSn (x = 0.1, 0.2, and 0.3)bulk samples are fabricated by microwave synthesis for 5 minutes and microwave sintering for 20 min. The phase composition and microstructure of the samples are characterized by X-ray diffraction (XRD), laser confocal Raman scattering (LCRS), scanning electron microscopy (SEM), and high-resolution transmission electron microscopy (HR-TEM). The Seebeck coefficient, electrical resistivity, and thermal diffusivity are determined and the effects of microwave heating and impurities on the microstructure and thermoelectric properties are investigated and discussed. The largest power factor of 3475 μW m−1 K−2 and maximum dimensionless thermoelectric figure of merit of 0.41 are achieved from Hf0.1Ti 0.9 NiSn.

Research Area(s)

  • Electrical properties, Hf x Ti 1−x NiSn, Microstructure, Microwave heating, Power factor, Thermal properties

Citation Format(s)

Microwave synthesis and enhancement of power factors of HfxTi1−xNiSn. / Li, Yu; Zheng, Rui; Lei, Ying; Chen, Wen; Wan, Rundong; Zhou, Hongwei; Chu, Paul K.

In: Materials Letters, Vol. 251, 15.09.2019, p. 13-17.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalNot applicablepeer-review