Microstructures of gallium nitride nanowires synthesized by oxide-assisted method

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • W. S. Shi
  • Y. F. Zheng
  • N. Wang
  • C. S. Lee
  • S. T. Lee

Detail(s)

Original languageEnglish
Pages (from-to)377-380
Journal / PublicationChemical Physics Letters
Volume345
Issue number5-6
Publication statusPublished - 21 Sep 2001
Externally publishedYes

Abstract

Gallium nitride (GaN) nanowires were synthesized using the recently developed oxide-assisted method by laser ablating a target of GaN mixed with gallium oxide (Ga2O3). Transmission electron microscopic characterization showed that GaN nanowires were smooth and straight with a core-sheath structure of 80 nm in average diameter and tens of micrometers in length. Both hexagonal and cubic structured GaN nanowires were produced. The growth mechanism was discussed.

Citation Format(s)

Microstructures of gallium nitride nanowires synthesized by oxide-assisted method. / Shi, W. S.; Zheng, Y. F.; Wang, N.; Lee, C. S.; Lee, S. T.

In: Chemical Physics Letters, Vol. 345, No. 5-6, 21.09.2001, p. 377-380.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review