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Microstructures of gallium nitride nanowires synthesized by oxide-assisted method

  • W. S. Shi
  • , Y. F. Zheng
  • , N. Wang
  • , C. S. Lee
  • , S. T. Lee

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

Abstract

Gallium nitride (GaN) nanowires were synthesized using the recently developed oxide-assisted method by laser ablating a target of GaN mixed with gallium oxide (Ga2O3). Transmission electron microscopic characterization showed that GaN nanowires were smooth and straight with a core-sheath structure of 80 nm in average diameter and tens of micrometers in length. Both hexagonal and cubic structured GaN nanowires were produced. The growth mechanism was discussed.

© 2001 Published by Elsevier Science B.V.
Original languageEnglish
Pages (from-to)377-380
JournalChemical Physics Letters
Volume345
Issue number5-6
DOIs
Publication statusPublished - 21 Sept 2001
Externally publishedYes

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