Abstract
Gallium nitride (GaN) nanowires were synthesized using the recently developed oxide-assisted method by laser ablating a target of GaN mixed with gallium oxide (Ga2O3). Transmission electron microscopic characterization showed that GaN nanowires were smooth and straight with a core-sheath structure of 80 nm in average diameter and tens of micrometers in length. Both hexagonal and cubic structured GaN nanowires were produced. The growth mechanism was discussed.
© 2001 Published by Elsevier Science B.V.
© 2001 Published by Elsevier Science B.V.
| Original language | English |
|---|---|
| Pages (from-to) | 377-380 |
| Journal | Chemical Physics Letters |
| Volume | 345 |
| Issue number | 5-6 |
| DOIs | |
| Publication status | Published - 21 Sept 2001 |
| Externally published | Yes |
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