Microstructure of GaN1-xBix
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
Author(s)
Detail(s)
| Original language | English |
|---|---|
| Pages (from-to) | 26-32 |
| Journal / Publication | Journal of Electronic Materials |
| Volume | 42 |
| Issue number | 1 |
| Publication status | Published - Jan 2013 |
| Externally published | Yes |
Link(s)
Abstract
In this paper we describe detailed transmission electron microscopy studies of GaN1-xBix with 0.05 < x <0.18 grown by low-temperature molecular beam epitaxy under Ga-rich conditions. Microstructural transformation from columnar growth separated by thin amorphous areas in the films with lowest Bi content (5%) to pseudo-amorphous structure with crystalline grains embedded in the amorphous matrix in the samples with higher Bi content (13% to 18%) was observed. In addition, metallic Bi segregation occurred in the samples with the highest Bi concentration. An abrupt decrease in absorption edge energy is found in samples with higher Bi content. © 2012 TMS (outside the USA).
Research Area(s)
- absorption, bandgap, GaNBi, highly mismatched semiconductors, Microstructure, TEM
Citation Format(s)
Microstructure of GaN1-xBix. / Liliental-Weber, Z.; Dos Reis, R.; Levander, A.X. et al.
In: Journal of Electronic Materials, Vol. 42, No. 1, 01.2013, p. 26-32.
In: Journal of Electronic Materials, Vol. 42, No. 1, 01.2013, p. 26-32.
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
