Microstructure of GaN1-xBix

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • Z. Liliental-Weber
  • R. Dos Reis
  • A.X. Levander
  • W. Walukiewicz
  • S.V. Novikov
  • C.T. Foxon

Detail(s)

Original languageEnglish
Pages (from-to)26-32
Journal / PublicationJournal of Electronic Materials
Volume42
Issue number1
Publication statusPublished - Jan 2013
Externally publishedYes

Abstract

In this paper we describe detailed transmission electron microscopy studies of GaN1-xBix with 0.05 < x <0.18 grown by low-temperature molecular beam epitaxy under Ga-rich conditions. Microstructural transformation from columnar growth separated by thin amorphous areas in the films with lowest Bi content (5%) to pseudo-amorphous structure with crystalline grains embedded in the amorphous matrix in the samples with higher Bi content (13% to 18%) was observed. In addition, metallic Bi segregation occurred in the samples with the highest Bi concentration. An abrupt decrease in absorption edge energy is found in samples with higher Bi content. © 2012 TMS (outside the USA).

Research Area(s)

  • absorption, bandgap, GaNBi, highly mismatched semiconductors, Microstructure, TEM

Citation Format(s)

Microstructure of GaN1-xBix. / Liliental-Weber, Z.; Dos Reis, R.; Levander, A.X. et al.
In: Journal of Electronic Materials, Vol. 42, No. 1, 01.2013, p. 26-32.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review