Microstructure and crystallinity of porous silicon and epitaxial silicon layers fabricated on p+ porous silicon

Weili Liu; Xinying Xie; Miao Zhang; Qinwo Shen; Chenglu Lin; Lumin Wang; Paul K. Chu

doi:10.1116/1.1537714

Author(s)

Weili Liu
Xinying Xie
Miao Zhang
Qinwo Shen
Chenglu Lin
Lumin Wang

Detail(s)

Original language	English
Pages (from-to)	168-173
Journal / Publication	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	21
Issue number	1 SPEC.
Publication status	Published - Jan 2003

Link(s)

DOI	DOI https://doi.org/10.1116/1.1537714 Final Published version
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Link to Scopus	https://www.scopus.com/record/display.uri?eid=2-s2.0-0037207706&origin=recordpage
Permanent Link	https://scholars.cityu.edu.hk/en/publications/publication(85157a5b-453e-48ad-b508-1b724edcd06f).html

Abstract

The crystallinity of four typical types of porous silicon was systematically studied by both transmission electron microscopy (TEM) and XRD. Based on results, Si epitaxy on porous silicon was further investigated. The microstructure, crystallinity, surface topography, and electric properties of the epitaxial layer were characterized. Results show that preoxidation can prevent boron diffusion during the growth process.

Citation Format(s)

[ RIS ] [ BibTeX ]

Microstructure and crystallinity of porous silicon and epitaxial silicon layers fabricated on p⁺ porous silicon. / Liu, Weili; Xie, Xinying; Zhang, Miao et al.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 21, No. 1 SPEC., 01.2003, p. 168-173.

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

Liu, W, Xie, X, Zhang, M, Shen, Q, Lin, C, Wang, L & Chu, PK 2003, 'Microstructure and crystallinity of porous silicon and epitaxial silicon layers fabricated on p⁺ porous silicon', Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 21, no. 1 SPEC., pp. 168-173. https://doi.org/10.1116/1.1537714

Liu, W., Xie, X., Zhang, M., Shen, Q., Lin, C., Wang, L., & Chu, P. K. (2003). Microstructure and crystallinity of porous silicon and epitaxial silicon layers fabricated on p⁺ porous silicon. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 21(1 SPEC.), 168-173. https://doi.org/10.1116/1.1537714

Liu W, Xie X, Zhang M, Shen Q, Lin C, Wang L et al. Microstructure and crystallinity of porous silicon and epitaxial silicon layers fabricated on p⁺ porous silicon. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2003 Jan;21(1 SPEC.):168-173. doi: 10.1116/1.1537714

Liu, Weili ; Xie, Xinying ; Zhang, Miao et al. / Microstructure and crystallinity of porous silicon and epitaxial silicon layers fabricated on p⁺ porous silicon. In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2003 ; Vol. 21, No. 1 SPEC. pp. 168-173.