Microstructural characterization of Si cones fabricated by Ar+-sputtering Si/Mo targets

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

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Author(s)

  • X. L. Ma
  • N. G. Shang
  • Q. Li
  • I. Bello
  • S. T. Lee

Detail(s)

Original languageEnglish
Pages (from-to)654-659
Journal / PublicationJournal of Crystal Growth
Volume234
Issue number4
Publication statusPublished - Feb 2002

Abstract

Ar+ sputtering of Si wafers surrounded by Mo plates induced the formation of uniform cones over a large area on the Si surface. Scanning electron microscopic study showed that the cones were formed on the entire surface of the Si wafer. The uniform cones were 0.4-0.7μm in diameter and 5-6μm high. They were further characterized by means of cross-sectional transmission electron microscopy, and micro-diffraction. It was found that the cone contained a pure Si regime and a Mo-rich regime. In the binary Mo-Si zone, we identified three distinct areas vertically: (1) domains of Mo-induced Si ordered structures; (2) a small volume of a new Mo3Si2 structural variant, intergrown with the Si ordered structure; and (3) a small amount of pure Mo nanoparticles covering the surface of the cones. The formation of the large and uniform cones may provide a new surface configuration for potential applications in surface science and technology. © 2002 Published by Elsevier Science B.V.

Research Area(s)

  • A1. Characterization, A1. Transmission electron microscopy, A2. Ion beam sputtering, B1. Silicon cones

Citation Format(s)

Microstructural characterization of Si cones fabricated by Ar+-sputtering Si/Mo targets. / Ma, X. L.; Shang, N. G.; Li, Q. et al.
In: Journal of Crystal Growth, Vol. 234, No. 4, 02.2002, p. 654-659.

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review