TY - JOUR
T1 - Microstructural changes in confined submicrometer aluminum films
AU - Chou, M. L.
AU - Rishton, S. A.
AU - Tu, K. N.
AU - Chen, Haydn
N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].
PY - 1993
Y1 - 1993
N2 - The stress effect on microstructure evolution in submicrometer Al dots in confinement has been studied by transmission electron microscopy. Direct observation of grain growth and void formation in the dots, unconfined as well as confined by sputtered quartz, was investigated. In the as-deposited state, most of the grains were larger than the film thickness of 300 Å, indicating that the grains have grown during the Al deposition and/or the quartz deposition. Voids were only found in the confined samples. Grain growth was retarded in the confined samples upon a stepwise annealing from room temperature to 400°C, yet secondary grain growth occurred at temperatures above 500°C. For the unconfined samples, abnormal grain growth occurred at 200°C. The retardation of grain growth in the confined sample was attributed to the lack of stress gradient and vacancy sources and the hinderance of dislocation motion. The mechanism of secondary grain growth in the confined samples was observed to be the coalesence of adjacent grains.
AB - The stress effect on microstructure evolution in submicrometer Al dots in confinement has been studied by transmission electron microscopy. Direct observation of grain growth and void formation in the dots, unconfined as well as confined by sputtered quartz, was investigated. In the as-deposited state, most of the grains were larger than the film thickness of 300 Å, indicating that the grains have grown during the Al deposition and/or the quartz deposition. Voids were only found in the confined samples. Grain growth was retarded in the confined samples upon a stepwise annealing from room temperature to 400°C, yet secondary grain growth occurred at temperatures above 500°C. For the unconfined samples, abnormal grain growth occurred at 200°C. The retardation of grain growth in the confined sample was attributed to the lack of stress gradient and vacancy sources and the hinderance of dislocation motion. The mechanism of secondary grain growth in the confined samples was observed to be the coalesence of adjacent grains.
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U2 - 10.1063/1.353069
DO - 10.1063/1.353069
M3 - RGC 21 - Publication in refereed journal
SN - 0021-8979
VL - 73
SP - 2575
EP - 2577
JO - Journal of Applied Physics
JF - Journal of Applied Physics
IS - 5
ER -