Micro-Light-Emitting Diodes Based on InGaN Materials with Quantum Dots

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

5 Scopus Citations
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Author(s)

  • Zhaojun Liu
  • Byung-Ryool Hyun
  • Chun-Jung Lin
  • Mengyuan Changhu
  • Yonghong Lin
  • Chih-Hsiang Ho
  • Hao-Chung Kuo

Detail(s)

Original languageEnglish
Article number2101189
Journal / PublicationAdvanced Materials Technologies
Volume7
Issue number6
Online published29 Dec 2021
Publication statusPublished - Jun 2022

Abstract

Micro-light-emitting diodes (Micro-LEDs) based on gallium nitride (GaN) materials offer versatile platforms for various applications, including displays, data communication tools, photodetectors, and sensors. In particular, the introduction of Micro-LEDs in the optoelectronic industry enables the development of novel short-distance wireless communication applications for the Internet of Things as well as near-to-eye displays for virtual reality and augmented reality. Micro-LEDs used in conjunction with colloidal quantum dots (QDs) as color-conversion layers provide efficient full-color displays as well as white LEDs for high-speed visible light communications (VLCs). Here, the latest progress on full-color Micro-LED displays with a printed QD color conversion layer, GaN material-based Micro-LEDs for VLC systems, and the photostability of novel QD materials for Micro-LEDs is comprehensively reviewed. Outlooks on the efficiency of Micro-LEDs with sizes ≤10 µm, QD stability issues, and flexible Micro-LED displays are also provided.

Research Area(s)

  • InGaN, micro-light-emitting diodes, quantum dots

Citation Format(s)

Micro-Light-Emitting Diodes Based on InGaN Materials with Quantum Dots. / Liu, Zhaojun; Hyun, Byung-Ryool; Sheng, Yujia et al.

In: Advanced Materials Technologies, Vol. 7, No. 6, 2101189, 06.2022.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review