Microdome InGaN-based multiple quantum well solar cells

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • Cheng-Han Ho
  • Kun-Yu Lai
  • Chin-An Lin
  • Guan-Jhong Lin
  • Meng-Kai Hsing

Detail(s)

Original languageEnglish
Article number023902
Journal / PublicationApplied Physics Letters
Volume101
Issue number2
Publication statusPublished - 9 Jul 2012
Externally publishedYes

Abstract

InGaN-based multiple quantum well (MQW) solar cells (SCs) employing the p-GaN microdome were demonstrated to significantly boost the conversion efficiency by 102%. The improvements in short-circuit current density (J sc , from 0.43 to 0.54 mA/cm2) and fill factor (from 44% to 72%) using the p-GaN microdome are attributed to enhanced light absorption due to surface reflection suppression. The concept of microdome directly grown during SC epitaxial growth preserving mechanical robustness and wafer-scale uniformity proves a promising way in promoting the photovoltaic performances of SCs without any additional process.

Citation Format(s)

Microdome InGaN-based multiple quantum well solar cells. / Ho, Cheng-Han; Lai, Kun-Yu; Lin, Chin-An; Lin, Guan-Jhong; Hsing, Meng-Kai; He, Jr-Hau.

In: Applied Physics Letters, Vol. 101, No. 2, 023902, 09.07.2012.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review