Microdome InGaN-based multiple quantum well solar cells

Cheng-Han Ho; Kun-Yu Lai; Chin-An Lin; Guan-Jhong Lin; Meng-Kai Hsing; Jr-Hau He

doi:10.1063/1.4734380

Microdome InGaN-based multiple quantum well solar cells

Cheng-Han Ho, Kun-Yu Lai, Chin-An Lin, Guan-Jhong Lin, Meng-Kai Hsing, Jr-Hau He^*

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

10 Citations (Scopus)

Abstract

InGaN-based multiple quantum well (MQW) solar cells (SCs) employing the p-GaN microdome were demonstrated to significantly boost the conversion efficiency by 102%. The improvements in short-circuit current density (J _sc , from 0.43 to 0.54 mA/cm²) and fill factor (from 44% to 72%) using the p-GaN microdome are attributed to enhanced light absorption due to surface reflection suppression. The concept of microdome directly grown during SC epitaxial growth preserving mechanical robustness and wafer-scale uniformity proves a promising way in promoting the photovoltaic performances of SCs without any additional process.

Original language	English
Article number	023902
Journal	Applied Physics Letters
Volume	101
Issue number	2
DOIs	https://doi.org/10.1063/1.4734380
Publication status	Published - 9 Jul 2012
Externally published	Yes

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@article{6ed388dc22ea4c9c92a8a9b166d39104,

title = "Microdome InGaN-based multiple quantum well solar cells",

abstract = "InGaN-based multiple quantum well (MQW) solar cells (SCs) employing the p-GaN microdome were demonstrated to significantly boost the conversion efficiency by 102%. The improvements in short-circuit current density (J sc , from 0.43 to 0.54 mA/cm2) and fill factor (from 44% to 72%) using the p-GaN microdome are attributed to enhanced light absorption due to surface reflection suppression. The concept of microdome directly grown during SC epitaxial growth preserving mechanical robustness and wafer-scale uniformity proves a promising way in promoting the photovoltaic performances of SCs without any additional process.",

author = "Cheng-Han Ho and Kun-Yu Lai and Chin-An Lin and Guan-Jhong Lin and Meng-Kai Hsing and Jr-Hau He",

year = "2012",

month = jul,

day = "9",

doi = "10.1063/1.4734380",

language = "English",

volume = "101",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "2",

}

TY - JOUR

T1 - Microdome InGaN-based multiple quantum well solar cells

AU - Ho, Cheng-Han

AU - Lai, Kun-Yu

AU - Lin, Chin-An

AU - Lin, Guan-Jhong

AU - Hsing, Meng-Kai

AU - He, Jr-Hau

PY - 2012/7/9

Y1 - 2012/7/9

N2 - InGaN-based multiple quantum well (MQW) solar cells (SCs) employing the p-GaN microdome were demonstrated to significantly boost the conversion efficiency by 102%. The improvements in short-circuit current density (J sc , from 0.43 to 0.54 mA/cm2) and fill factor (from 44% to 72%) using the p-GaN microdome are attributed to enhanced light absorption due to surface reflection suppression. The concept of microdome directly grown during SC epitaxial growth preserving mechanical robustness and wafer-scale uniformity proves a promising way in promoting the photovoltaic performances of SCs without any additional process.

AB - InGaN-based multiple quantum well (MQW) solar cells (SCs) employing the p-GaN microdome were demonstrated to significantly boost the conversion efficiency by 102%. The improvements in short-circuit current density (J sc , from 0.43 to 0.54 mA/cm2) and fill factor (from 44% to 72%) using the p-GaN microdome are attributed to enhanced light absorption due to surface reflection suppression. The concept of microdome directly grown during SC epitaxial growth preserving mechanical robustness and wafer-scale uniformity proves a promising way in promoting the photovoltaic performances of SCs without any additional process.

UR - http://www.scopus.com/inward/record.url?scp=84863921199&partnerID=8YFLogxK

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-84863921199&origin=recordpage

U2 - 10.1063/1.4734380

DO - 10.1063/1.4734380

M3 - RGC 21 - Publication in refereed journal

SN - 0003-6951

VL - 101

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

M1 - 023902

ER -

Microdome InGaN-based multiple quantum well solar cells

Abstract

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