TY - JOUR
T1 - Microcrystalline diamond films by direct ion beam deposition
AU - Feng, J. Y.
AU - Shang, N. G.
AU - Sun, X. S.
AU - Bello, I.
AU - Lee, C. S.
AU - Lee, S. T.
PY - 2000/4
Y1 - 2000/4
N2 - Microcrystalline diamond films have been successfully synthesized by direct ion beam deposition. Low energy (60-200 eV) ions of hydrocarbon, argon and hydrogen generated in a Kaufman ion source were perpendicularly directed to (100) silicon substrates pretreated by diamond powder scratching. Diamond particles of approximately 1 micron in size embedded in a matrix of amorphous carbon were obtained at an ion energy of 80 eV, a methane concentration of 1%, and a substrate temperature of 700 °C. The feature of diamond was confirmed by Raman spectroscopy and X-ray diffraction. The mechanism of ion-induced formation of microcrystalline diamond was discussed.
AB - Microcrystalline diamond films have been successfully synthesized by direct ion beam deposition. Low energy (60-200 eV) ions of hydrocarbon, argon and hydrogen generated in a Kaufman ion source were perpendicularly directed to (100) silicon substrates pretreated by diamond powder scratching. Diamond particles of approximately 1 micron in size embedded in a matrix of amorphous carbon were obtained at an ion energy of 80 eV, a methane concentration of 1%, and a substrate temperature of 700 °C. The feature of diamond was confirmed by Raman spectroscopy and X-ray diffraction. The mechanism of ion-induced formation of microcrystalline diamond was discussed.
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U2 - 10.1016/S0925-9635(00)00196-5
DO - 10.1016/S0925-9635(00)00196-5
M3 - RGC 21 - Publication in refereed journal
SN - 0925-9635
VL - 9
SP - 872
EP - 876
JO - Diamond and Related Materials
JF - Diamond and Related Materials
IS - 3
T2 - 10th European Conference on Diamond, Diamond-like Materials, Carbon Nanotubes, Nitrides and Silicon Carbide
Y2 - 12 September 1999 through 17 September 1999
ER -