Mg-doped InN and InGaN - Photoluminescence, capacitance-voltage and thermopower measurements

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

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Author(s)

  • J. W. Ager III
  • N. Miller
  • R. E. Jones
  • J. Wu
  • W. J. Schaff
  • W. Walukiewicz

Detail(s)

Original languageEnglish
Pages (from-to)873-877
Journal / PublicationPhysica Status Solidi (B) Basic Research
Volume245
Issue number5
Publication statusPublished - May 2008
Externally publishedYes

Abstract

The bandgap range of InGaN extends from the near-IR (InN, 0.65 eV) to the ultraviolet. To exploit this wide tuning range in light generation and conversion applications, pn junctions are required. The large electron affinity of InN (5.8 eV) leads to preferential formation of native donor defects, resulting in excess electron concentration in the bulk and at surfaces and interfaces. This creates difficulties for p-type doping and/or measuring of the bulk p-type activity. Capacitance-voltage measurements, which deplete the n-type surface inversion layer, have been used to show that Mg is an active acceptor in InN and InxGa1-xN for 0.2 < x < 1.0, i.e. over the entire composition range. Mg acceptors can be compensated by irradiation-induced native donors. Thermopower measurements were used to provide definitive evidence that Mg-doped InN has mobile holes between 200 K and 300 K. © 2008 Wiley-VCH Verlag GmbH & Co. KGaA.

Citation Format(s)

Mg-doped InN and InGaN - Photoluminescence, capacitance-voltage and thermopower measurements. / Ager III, J. W.; Miller, N.; Jones, R. E. et al.
In: Physica Status Solidi (B) Basic Research, Vol. 245, No. 5, 05.2008, p. 873-877.

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review