Mg doped InN and confirmation of free holes in InN

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

46 Scopus Citations
View graph of relations

Author(s)

  • K. Wang
  • N. Miller
  • R. Iwamoto
  • T. Yamaguchi
  • M. A. Mayer
  • T. Araki
  • Y. Nanishi
  • E. E. Haller
  • W. Walukiewicz
  • J. W. Ager III

Detail(s)

Original languageEnglish
Article number42104
Journal / PublicationApplied Physics Letters
Volume98
Issue number4
Publication statusPublished - 24 Jan 2011
Externally publishedYes

Abstract

We report a systematic investigation on Mg doped InN epilayers grown by radio-frequency plasma-assisted molecular beam epitaxy. Electrolyte capacitance voltage (ECV) combined with thermopower measurements find p-type conduction over an Mg concentration range. For InN:Mg in this p-type "window" the Seebeck coefficients dramatically change their signs from negative to positive when the thickness of undoped InN interlayer decreases to zero. This notable sign change of Seebeck coefficient explains the previous inconsistency between ECV and thermopower results and confirms the existence of mobile holes in the InN:Mg. Taking into account the undoped InN interlayer, the hole density and mobility are extracted. © 2011 American Institute of Physics.

Citation Format(s)

Mg doped InN and confirmation of free holes in InN. / Wang, K.; Miller, N.; Iwamoto, R.; Yamaguchi, T.; Mayer, M. A.; Araki, T.; Nanishi, Y.; Yu, K. M.; Haller, E. E.; Walukiewicz, W.; Ager III, J. W.

In: Applied Physics Letters, Vol. 98, No. 4, 42104, 24.01.2011.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review