METASTABLE Au-Si ALLOYS FORMATION INDUCED BY ION-BEAM INTERFACE MIXING.

B. Y. Tsaur; J. W. Mayer; M. A. Nicolet; K. N. Tu

METASTABLE Au-Si ALLOYS FORMATION INDUCED BY ION-BEAM INTERFACE MIXING.

B. Y. Tsaur, J. W. Mayer, M. A. Nicolet, K. N. Tu

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

6 Citations (Scopus)

Abstract

An amorphous alloy with a composition Au-28. 5 at. % Si (Au//5Si//2) has been formed by implanting energetic Xe, Ar and Ne ions through a thin layer of Au deposited on a Si substrate. The amorphous alloy phase was unstable at temperatures above 100 degree C and transformed into a metastable crystalline phase with a hexagonal crystal structure. This metastable phase then decomposed into an equilibrium mixture of Au and Si at higher annealing temperatures ( greater than 180 degree C). The sequential decomposition of the amorphous and metastable phases were also observed at room temperature but during several weeks. The atomic mechanisms involved in interface mixing are discussed. The results are compared with those obtained by rapid quenching techniques and thermal treatment of Au films on single crystal Si substrates.

Original language	English
Title of host publication	Proceedings - Annual Symposium on Computer Applications in Medical Care
Publisher	Metall Soc of AIME
Pages	142-151
Publication status	Published - 1980
Externally published	Yes
Event	Ion Implantation Metall, Proc of a Symp at Annu Meet of the Mater Res Soc - Cambridge, MA, Engl Duration: 30 Nov 1979 → 30 Nov 1979

Conference

Conference	Ion Implantation Metall, Proc of a Symp at Annu Meet of the Mater Res Soc
City	Cambridge, MA, Engl
Period	30/11/79 → 30/11/79

Bibliographical note

Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

Other Access Options

Check CityUHK Library

Permanent Link

Right click to copy link

Cite this

@inproceedings{412e57826a884a3aa6f633c3f7cc7bb0,

title = "METASTABLE Au-Si ALLOYS FORMATION INDUCED BY ION-BEAM INTERFACE MIXING.",

abstract = "An amorphous alloy with a composition Au-28. 5 at. % Si (Au//5Si//2) has been formed by implanting energetic Xe, Ar and Ne ions through a thin layer of Au deposited on a Si substrate. The amorphous alloy phase was unstable at temperatures above 100 degree C and transformed into a metastable crystalline phase with a hexagonal crystal structure. This metastable phase then decomposed into an equilibrium mixture of Au and Si at higher annealing temperatures ( greater than 180 degree C). The sequential decomposition of the amorphous and metastable phases were also observed at room temperature but during several weeks. The atomic mechanisms involved in interface mixing are discussed. The results are compared with those obtained by rapid quenching techniques and thermal treatment of Au films on single crystal Si substrates.",

author = "Tsaur, {B. Y.} and Mayer, {J. W.} and Nicolet, {M. A.} and Tu, {K. N.}",

note = "Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].; Ion Implantation Metall, Proc of a Symp at Annu Meet of the Mater Res Soc ; Conference date: 30-11-1979 Through 30-11-1979",

year = "1980",

language = "English",

pages = "142--151",

booktitle = "Proceedings - Annual Symposium on Computer Applications in Medical Care",

publisher = "Metall Soc of AIME",

}

METASTABLE Au-Si ALLOYS FORMATION INDUCED BY ION-BEAM INTERFACE MIXING. / Tsaur, B. Y.; Mayer, J. W.; Nicolet, M. A. et al.
Proceedings - Annual Symposium on Computer Applications in Medical Care. Metall Soc of AIME, 1980. p. 142-151.

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

TY - GEN

T1 - METASTABLE Au-Si ALLOYS FORMATION INDUCED BY ION-BEAM INTERFACE MIXING.

AU - Tsaur, B. Y.

AU - Mayer, J. W.

AU - Nicolet, M. A.

AU - Tu, K. N.

N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

PY - 1980

Y1 - 1980

N2 - An amorphous alloy with a composition Au-28. 5 at. % Si (Au//5Si//2) has been formed by implanting energetic Xe, Ar and Ne ions through a thin layer of Au deposited on a Si substrate. The amorphous alloy phase was unstable at temperatures above 100 degree C and transformed into a metastable crystalline phase with a hexagonal crystal structure. This metastable phase then decomposed into an equilibrium mixture of Au and Si at higher annealing temperatures ( greater than 180 degree C). The sequential decomposition of the amorphous and metastable phases were also observed at room temperature but during several weeks. The atomic mechanisms involved in interface mixing are discussed. The results are compared with those obtained by rapid quenching techniques and thermal treatment of Au films on single crystal Si substrates.

AB - An amorphous alloy with a composition Au-28. 5 at. % Si (Au//5Si//2) has been formed by implanting energetic Xe, Ar and Ne ions through a thin layer of Au deposited on a Si substrate. The amorphous alloy phase was unstable at temperatures above 100 degree C and transformed into a metastable crystalline phase with a hexagonal crystal structure. This metastable phase then decomposed into an equilibrium mixture of Au and Si at higher annealing temperatures ( greater than 180 degree C). The sequential decomposition of the amorphous and metastable phases were also observed at room temperature but during several weeks. The atomic mechanisms involved in interface mixing are discussed. The results are compared with those obtained by rapid quenching techniques and thermal treatment of Au films on single crystal Si substrates.

UR - http://www.scopus.com/inward/record.url?scp=0019263155&partnerID=8YFLogxK

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0019263155&origin=recordpage

M3 - RGC 32 - Refereed conference paper (with host publication)

SP - 142

EP - 151

BT - Proceedings - Annual Symposium on Computer Applications in Medical Care

PB - Metall Soc of AIME

T2 - Ion Implantation Metall, Proc of a Symp at Annu Meet of the Mater Res Soc

Y2 - 30 November 1979 through 30 November 1979

ER -

METASTABLE Au-Si ALLOYS FORMATION INDUCED BY ION-BEAM INTERFACE MIXING.

Abstract

Conference

Bibliographical note

Other Access Options

Permanent Link

Other Files and Links

Fingerprint

Cite this